Infineon HEXFET N-Channel MOSFET, 65 A, 200 V Enhancement, 3-Pin TO-220
- RS Stock No.:
- 913-3932
- Mfr. Part No.:
- IRFB4227PBF
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
View bulk pricing optionsSubtotal (1 tube of 50 units)*
MYR524.80
FREE delivery for orders over RM 150.00
Temporarily out of stock
- 950 unit(s) shipping from 27 May 2027
- Plus 1,000 unit(s) shipping from 07 October 2027
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Tube* |
|---|---|---|
| 50 - 50 | MYR10.496 | MYR524.80 |
| 100 - 150 | MYR10.334 | MYR516.70 |
| 200 + | MYR10.133 | MYR506.65 |
*price indicative
- RS Stock No.:
- 913-3932
- Mfr. Part No.:
- IRFB4227PBF
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 65A | |
| Maximum Drain Source Voltage Vds | 200V | |
| Package Type | TO-220 | |
| Series | HEXFET | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 24mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 70nC | |
| Maximum Power Dissipation Pd | 330W | |
| Minimum Operating Temperature | -40°C | |
| Forward Voltage Vf | 1.3V | |
| Maximum Gate Source Voltage Vgs | -30V, +30V | |
| Maximum Operating Temperature | 175°C | |
| Length | 10.66mm | |
| Height | 9.02mm | |
| Standards/Approvals | RoHS | |
| Width | 4.82mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 65A | ||
Maximum Drain Source Voltage Vds 200V | ||
Package Type TO-220 | ||
Series HEXFET | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 24mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 70nC | ||
Maximum Power Dissipation Pd 330W | ||
Minimum Operating Temperature -40°C | ||
Forward Voltage Vf 1.3V | ||
Maximum Gate Source Voltage Vgs -30V, +30V | ||
Maximum Operating Temperature 175°C | ||
Length 10.66mm | ||
Height 9.02mm | ||
Standards/Approvals RoHS | ||
Width 4.82mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
Infineon HEXFET Series MOSFET, 200V Maximum Drain-Source Voltage, 65A Maximum Continuous Drain Current - IRFB4227PBF
This MOSFET is a high-current N-channel enhancement device designed for power switching and control in demanding electronic systems. It operates across a wide temperature range and is supplied in a through-hole TO-220 package suitable for conventional board mounting. The device meets RoHS requirements and is intended for applications requiring substantial continuous current handling and thermal resilience.
Features and Benefits:
• 24mΩ low Rds(on) gives reduced conduction losses
• 330W power dissipation enables sustained thermal load handling
• 70nC gate charge allows Faster switching transitions
• 30V gate tolerance supports robust gate-drive margins
• -40°C to 175°C rating sustains wide operating environments
• 330W power dissipation enables sustained thermal load handling
• 70nC gate charge allows Faster switching transitions
• 30V gate tolerance supports robust gate-drive margins
• -40°C to 175°C rating sustains wide operating environments
Applications
• Suitable for high-current DC motor controllers
• Ideal for switch-mode power supplies and converters
• Used with battery management and power distribution systems
• Can be used for industrial inverter stages
• Suitable for general-purpose power switching on through-hole boards
• Ideal for switch-mode power supplies and converters
• Used with battery management and power distribution systems
• Can be used for industrial inverter stages
• Suitable for general-purpose power switching on through-hole boards
What is the device’s package and mounting style?
It is supplied in a TO-220 package and intended for through-hole mounting.
What operating temperature extremes can it withstand?
It is rated to operate from -40°C up to 175°C.
How does the device address regulatory material restrictions?
It conforms to RoHS standards limiting hazardous substances.
What is the channel type and conduction mode?
It is an N-channel device operating in enhancement mode.
What are the gate and drain voltage limits?
The gate is rated to ±30V and the drain-to-source maximum is 200V.
Related links
- Infineon HEXFET N-Channel MOSFET 200 V Enhancement, 3-Pin TO-220 IRFB4227PBF
- Infineon HEXFET N-Channel MOSFET 200 V Enhancement, 3-Pin TO-247
- Infineon HEXFET N-Channel MOSFET 200 V Enhancement, 3-Pin TO-247 IRFP4227PBF
- Infineon HEXFET N-Channel MOSFET 200 V Enhancement, 3-Pin TO-220
- Infineon HEXFET N-Channel MOSFET 200 V Enhancement, 3-Pin TO-220
- Infineon HEXFET N-Channel MOSFET 200 V Enhancement, 3-Pin TO-220
- Infineon HEXFET N-Channel MOSFET 200 V Enhancement, 3-Pin TO-220 IRFB5620PBF
- Infineon HEXFET N-Channel MOSFET 200 V Enhancement, 3-Pin TO-220 IRFB260NPBF