N-Channel MOSFET, 25 A, 200 V, 3-Pin TO-220AB Infineon IRFB5620PBF

RS Stock No.:: 124-9009
Mfr. Part No.:: IRFB5620PBF
Manufacturer:: Infineon

N-Channel MOSFET, 25 A, 200 V, 3-Pin TO-220AB Infineon IRFB5620PBF

Bulk discount available

Price Each (In a Tube of 50)

MYR10.222

1908 In Global stock for delivery in 4-6 working days, delivery time may vary for certain locations or FTZ*

* Delivery dates may change based on your chosen quantity and delivery address.

Units	Per Unit	Per Tube**
50 - 50	MYR10.222	MYR511.10
100 - 150	MYR10.065	MYR503.25
200 +	MYR9.869	MYR493.45

**price indicative

RS Stock No.:: 124-9009
Mfr. Part No.:: IRFB5620PBF
Manufacturer:: Infineon

Datasheet
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	25 A
Maximum Drain Source Voltage	200 V
Series	HEXFET
Package Type	TO-220AB
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	73 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	5V
Minimum Gate Threshold Voltage	3V
Maximum Power Dissipation	14 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Width	4.83mm
Maximum Operating Temperature	+175 °C
Length	10.67mm
Typical Gate Charge @ Vgs	25 nC @ 10 V
Transistor Material	Si
Number of Elements per Chip	1
Height	9.02mm
Minimum Operating Temperature	-55 °C

N-Channel MOSFET, 25 A, 200 V, 3-Pin TO-220AB Infineon IRFB5620PBF

Digital Audio MOSFET, Infineon