Infineon SIPMOS Type P-Channel MOSFET, 1 A, 100 V Enhancement, 4-Pin SOT-223
- RS Stock No.:
- 165-5812
- Mfr. Part No.:
- BSP322PH6327XTSA1
- Manufacturer:
- Infineon
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MYR1,796.00
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Units | Per Unit | Per Reel* |
|---|---|---|
| 1000 - 1000 | MYR1.796 | MYR1,796.00 |
| 2000 - 3000 | MYR1.756 | MYR1,756.00 |
| 4000 + | MYR1.724 | MYR1,724.00 |
*price indicative
- RS Stock No.:
- 165-5812
- Mfr. Part No.:
- BSP322PH6327XTSA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 1A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | SIPMOS | |
| Package Type | SOT-223 | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 800mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 0.84V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 1.8W | |
| Typical Gate Charge Qg @ Vgs | 12.4nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 6.5mm | |
| Height | 1.6mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 1A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series SIPMOS | ||
Package Type SOT-223 | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 800mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 0.84V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 1.8W | ||
Typical Gate Charge Qg @ Vgs 12.4nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 6.5mm | ||
Height 1.6mm | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- CN
Infineon SIPMOS Series MOSFET, 100V Maximum Drain Source Voltage, 1.8W Maximum Power Dissipation - BSP322PH6327XTSA1
This MOSFET is a P-channel enhancement device designed for surface-mounted power switching in demanding environments. It operates across a wide temperature span and is suited to high-voltage P-channel switching tasks where a compact package form and automotive-grade robustness are required.
Features and Benefits:
• 100V drain rating enables high-voltage switching capability
• 800mΩ Rds(on) minimises conduction losses under load
• 1A continuous drain current supports low-to-moderate currents
• 1.8W maximum dissipation allows stable power handling
• 12.4nC typical gate charge yields predictable gate-drive demands
• 20V maximum gate-source voltage maintains safe drive margin
• 800mΩ Rds(on) minimises conduction losses under load
• 1A continuous drain current supports low-to-moderate currents
• 1.8W maximum dissipation allows stable power handling
• 12.4nC typical gate charge yields predictable gate-drive demands
• 20V maximum gate-source voltage maintains safe drive margin
Applications
• Suitable for load switching in automotive electronic modules
• Ideal for high-voltage polarity-protection circuits
• Used for power management in battery-operated systems
• Can be used for reverse-current prevention in DC rails
• Suitable for compact surface-mount power-conversion stages
• Ideal for high-voltage polarity-protection circuits
• Used for power management in battery-operated systems
• Can be used for reverse-current prevention in DC rails
• Suitable for compact surface-mount power-conversion stages
What temperature range can it tolerate in the field?
It is specified to operate from -55°C up to 150°C, making it appropriate for harsh thermal environments.
How many pins and mounting style should designers expect?
The device has four pins and is intended for surface-mount assembly in a SOT-223 footprint.
What electrical characteristic determines switching-speed requirements?
The gate charge of 12.4nC indicates the charge required at the gate and informs selection of gate drivers and drive timing.
Which mechanical envelope dimensions matter for layout planning?
The component measures 6.5 x 3.5 x 1.6mm, which assists footprint and clearance considerations.
Related links
- Infineon SIPMOS Type P-Channel MOSFET 100 V Enhancement, 4-Pin SOT-223 BSP322PH6327XTSA1
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