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    P-Channel MOSFET, 2.9 A, 60 V, 3-Pin SOT-223 Infineon BSP613PH6327XTSA1

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    Subtotal (1 reel of 1000 units)**

    MYR2,480.00

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    19000 In Global stock for delivery in 4-6 working days, delivery time may vary for certain locations or FTZ*

    * Delivery dates may change based on your chosen quantity and delivery address.

    Units
    Per Unit
    Per Reel**
    1000 +MYR2.48MYR2,480.00

    **price indicative

    RS Stock No.:
    178-5073
    Mfr. Part No.:
    BSP613PH6327XTSA1
    Manufacturer:
    Infineon
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    Manufacturer

    Infineon

    Channel Type

    P

    Maximum Continuous Drain Current

    2.9 A

    Maximum Drain Source Voltage

    60 V

    Series

    SIPMOS®

    Package Type

    SOT-223

    Mounting Type

    Surface Mount

    Pin Count

    3

    Maximum Drain Source Resistance

    130 mΩ

    Channel Mode

    Enhancement

    Maximum Gate Threshold Voltage

    4V

    Minimum Gate Threshold Voltage

    2.1V

    Maximum Power Dissipation

    10.8 W

    Transistor Configuration

    Single

    Maximum Gate Source Voltage

    -20 V, +20 V

    Length

    40mm

    Transistor Material

    Si

    Typical Gate Charge @ Vgs

    22 nC @ 10 V

    Maximum Operating Temperature

    +175 °C

    Number of Elements per Chip

    1

    Width

    40mm

    Minimum Operating Temperature

    -55 °C

    Height

    1.5mm

    Forward Diode Voltage

    1.1V

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