Infineon SIPMOS Type P-Channel MOSFET, 1.9 A, 60 V Enhancement, 4-Pin SOT-223 BSP170PH6327XTSA1

RS Stock No.:: 826-9250
Distrelec Article No.:: 304-44-412
Mfr. Part No.:: BSP170PH6327XTSA1
Manufacturer:: Infineon

Infineon SIPMOS Type P-Channel MOSFET, 1.9 A, 60 V Enhancement, 4-Pin SOT-223 BSP170PH6327XTSA1

This image is representative of the product range

Bulk discount available

View bulk pricing options

Subtotal (1 pack of 50 units)*

MYR134.90

Stock information currently inaccessible - Please check back later

Units	Per Unit	Per Pack*
50 - 450	MYR2.698	MYR134.90
500 +	MYR2.617	MYR130.85

*price indicative

RS Stock No.:: 826-9250
Distrelec Article No.:: 304-44-412
Mfr. Part No.:: BSP170PH6327XTSA1
Manufacturer:: Infineon

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	Type P
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	1.9A
	Maximum Drain Source Voltage Vds	60V
	Package Type	SOT-223
	Series	SIPMOS
	Mount Type	Surface
	Pin Count	4
	Maximum Drain Source Resistance Rds	300mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	10nC
	Forward Voltage Vf	-1.1V
	Maximum Gate Source Voltage Vgs	-20V, +20V
	Maximum Power Dissipation Pd	1.8W
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	150°C
	Standards/Approvals	No
	Height	1.6mm
	Width	3.5mm
	Length	6.5mm
	Automotive Standard	AEC-Q101

	Select all
	Brand Infineon
	Channel Type Type P
	Product Type MOSFET
	Maximum Continuous Drain Current Id 1.9A
	Maximum Drain Source Voltage Vds 60V
	Package Type SOT-223
	Series SIPMOS
	Mount Type Surface
	Pin Count 4
	Maximum Drain Source Resistance Rds 300mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 10nC
	Forward Voltage Vf -1.1V
	Maximum Gate Source Voltage Vgs -20V, +20V
	Maximum Power Dissipation Pd 1.8W
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 150°C
	Standards/Approvals No
	Height 1.6mm
	Width 3.5mm
	Length 6.5mm
	Automotive Standard AEC-Q101

Infineon SIPMOS Series MOSFET, 60V Maximum Drain Source Voltage, 1.9A Maximum Continuous Drain Current - BSP170PH6327XTSA1

This MOSFET is a P-channel enhancement device designed for surface-mount power switching in demanding automotive and industrial contexts. It handles negative gate-drive operation and suits circuits requiring moderate current handling and thermal endurance across a wide temperature range.

Features and Benefits:

• 60V drain voltage enables robust high-voltage switching
• 300mΩ Rds(on) reduces conduction losses during operation
• 1.9A continuous current supports steady-state load delivery
• 10nC typical gate charge enables efficient drive control
• 1.8W maximum dissipation manages moderate thermal loads
• -55°C to 150°C operating range maintains function in extremes

Applications

• Suitable for load switching in automotive electronics
• Ideal for battery management and power-rail control
• Used with driver ICs for DC-DC conversion stages
• Can be used for polarity protection in vehicle systems
• Suitable for compact surface-mount power modules

What mounting style does it require for PCB assembly?

It is supplied in a SOT-223 package intended for surface-mount placement.

How many terminals are available for circuit connections?

The device uses a four-pin configuration to accommodate source, drain and gate connectivity.

What gate-voltage limits must be observed during design?

The gate-to-source voltage must not exceed ±20V to prevent device stress.

How does the component perform under automotive qualification standards?

It meets the AEC-Q101 automotive requirement for semiconductor devices used in vehicle systems.