Vishay Si4848DY Type N-Channel MOSFET, 2.7 A, 150 V Enhancement, 8-Pin SOIC
- RS Stock No.:
- 146-4444
- Mfr. Part No.:
- SI4848DY-T1-GE3
- Manufacturer:
- Vishay
This image is representative of the product range
Bulk discount available
Subtotal (1 reel of 2500 units)*
MYR8,312.50
FREE delivery for orders over RM 500.00
Temporarily out of stock
- Shipping from 31 August 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Reel* |
|---|---|---|
| 2500 - 2500 | MYR3.325 | MYR8,312.50 |
| 5000 - 7500 | MYR3.252 | MYR8,130.00 |
| 10000 + | MYR3.192 | MYR7,980.00 |
*price indicative
- RS Stock No.:
- 146-4444
- Mfr. Part No.:
- SI4848DY-T1-GE3
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 2.7A | |
| Maximum Drain Source Voltage Vds | 150V | |
| Series | Si4848DY | |
| Package Type | SOIC | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 95mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 3W | |
| Typical Gate Charge Qg @ Vgs | 17nC | |
| Maximum Operating Temperature | 150°C | |
| Width | 4 mm | |
| Length | 5mm | |
| Standards/Approvals | No | |
| Height | 1.55mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 2.7A | ||
Maximum Drain Source Voltage Vds 150V | ||
Series Si4848DY | ||
Package Type SOIC | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 95mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 3W | ||
Typical Gate Charge Qg @ Vgs 17nC | ||
Maximum Operating Temperature 150°C | ||
Width 4 mm | ||
Length 5mm | ||
Standards/Approvals No | ||
Height 1.55mm | ||
Automotive Standard No | ||
Halogen-free
TrenchFET® Power MOSFETs
Related links
- Vishay Si4848DY Type N-Channel MOSFET 150 V Enhancement, 8-Pin SOIC SI4848DY-T1-GE3
- Vishay TrenchFET Type P-Channel MOSFET 30 V Enhancement, 3-Pin SOT-23
- Vishay Si4134DY Type N-Channel MOSFET 30 V Enhancement, 8-Pin SOIC
- Vishay ThunderFET Type N-Channel MOSFET 100 V Enhancement, 8-Pin SOIC
- Vishay Si4190ADY Type N-Channel MOSFET 100 V Enhancement, 8-Pin SOIC
- Vishay TrenchFET Type N-Channel MOSFET 30 V Enhancement, 8-Pin SOIC
- Vishay Si4162DY Type N-Channel MOSFET 30 V Enhancement, 8-Pin SOIC
- Vishay TrenchFET Type N-Channel MOSFET 40 V Enhancement, 8-Pin SOIC