N-Channel MOSFET, 13.6 A, 30 V, 8-Pin SOIC Vishay SI4162DY-T1-GE3

RS Stock No.:: 710-3323
Mfr. Part No.:: SI4162DY-T1-GE3
Manufacturer:: Vishay

N-Channel MOSFET, 13.6 A, 30 V, 8-Pin SOIC Vishay SI4162DY-T1-GE3

This image is representative of the product range

Price Each (In a Pack of 5)

MYR3.952

Temporarily out of stock - back order for despatch 17/12/2024, delivery within 4 working days from despatch date*

* Delivery dates may change based on your chosen quantity and delivery address.

Units	Per Unit	Per Pack**
5 +	MYR3.952	MYR19.76

**price indicative

RS Stock No.:: 710-3323
Mfr. Part No.:: SI4162DY-T1-GE3
Manufacturer:: Vishay

Trans MOSFET N-CH 30V 13.6A N
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	13.6 A
Maximum Drain Source Voltage	30 V
Package Type	SOIC
Mounting Type	Surface Mount
Pin Count	8
Maximum Drain Source Resistance	8 mΩ
Channel Mode	Enhancement
Minimum Gate Threshold Voltage	1V
Maximum Power Dissipation	2.5 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Maximum Operating Temperature	+150 °C
Length	5mm
Width	4mm
Typical Gate Charge @ Vgs	20 nC @ 10 V, 8.8 nC @ 4.5 V
Number of Elements per Chip	1
Transistor Material	Si
Minimum Operating Temperature	-55 °C
Height	1.5mm

N-Channel MOSFET, 13.6 A, 30 V, 8-Pin SOIC Vishay SI4162DY-T1-GE3

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