Infineon OptiMOS-T2 Type N-Channel MOSFET, 100 A, 40 V Enhancement, 3-Pin TO-252 IPD100N04S402ATMA1
- RS Stock No.:
- 110-7111
- Mfr. Part No.:
- IPD100N04S402ATMA1
- Manufacturer:
- Infineon
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Units | Per Unit | Per Pack* |
|---|---|---|
| 10 - 620 | MYR7.06 | MYR70.60 |
| 630 - 1240 | MYR6.664 | MYR66.64 |
| 1250 + | MYR5.837 | MYR58.37 |
*price indicative
- RS Stock No.:
- 110-7111
- Mfr. Part No.:
- IPD100N04S402ATMA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 100A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | TO-252 | |
| Series | OptiMOS-T2 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 2mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 91nC | |
| Maximum Power Dissipation Pd | 150W | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 175°C | |
| Height | 2.41mm | |
| Length | 6.73mm | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 100A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type TO-252 | ||
Series OptiMOS-T2 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 2mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 91nC | ||
Maximum Power Dissipation Pd 150W | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 175°C | ||
Height 2.41mm | ||
Length 6.73mm | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
RoHS Status: Not Applicable
Infineon OptiMOS-T2 Series MOSFET, 40V Maximum Drain Source Voltage, 100A Maximum Continuous Drain Current - IPD100N04S402ATMA1
This MOSFET is a high-current switching transistor designed for demanding electronic systems requiring robust thermal and electrical performance. It operates across an extended temperature range and is intended for surface-mount assembly, offering low on-resistance and efficient conduction for power conversion and switching tasks in automotive and industrial environments.
Features and Benefits:
• 2mΩ Rds provides minimal conduction losses
• 100A continuous drain current supports high-load applications
• 150W power dissipation enables substantial heat handling
• 91nC gate charge allows predictable switching control
• 1.2V forward voltage reduces conduction drop under load
• 20V gate tolerance assists protection against overdrive
• 100A continuous drain current supports high-load applications
• 150W power dissipation enables substantial heat handling
• 91nC gate charge allows predictable switching control
• 1.2V forward voltage reduces conduction drop under load
• 20V gate tolerance assists protection against overdrive
Applications
• Suitable for automotive power stages requiring AEC‑Q101 qualification
• Used for DC-DC converters in high-current systems
• Ideal for motor-drive switches in automotive electronics
• Can be used for battery management and power distribution
• Used with surface-mount assemblies on compact power modules
• Used for DC-DC converters in high-current systems
• Ideal for motor-drive switches in automotive electronics
• Can be used for battery management and power distribution
• Used with surface-mount assemblies on compact power modules
What package type should designers accommodate for board layout?
The device comes in a TO‑252 package and is intended for surface mounting, so land patterns should match that three-pin configuration and thermal pad requirements.
How does it perform across temperature extremes?
It maintains operation from -55°C up to 175°C, making it suitable for environments with wide thermal excursions and elevated ambient temperatures.
What polarity and channel arrangement does it use?
It is an N-channel enhancement‑mode device, requiring a positive gate-to-source voltage for conduction and offering standard N-channel switching behaviour.
Are there limits for drain-to-source and gate voltages to consider?
The maximum drain-to-source voltage is 40V and the gate-to-source maximum is 20V, so designs must ensure these limits are not exceeded during transients.
Related links
- Infineon OptiMOS-T2 Type N-Channel MOSFET 40 V Enhancement, 3-Pin TO-252
- Infineon OptiMOS-T2 Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-252
- Infineon OptiMOS-T2 Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-252 IPD100N06S403ATMA2
- Infineon OptiMOS-T2 Type N-Channel MOSFET 40 V Enhancement, 3-Pin TO-252
- Infineon OptiMOS-T2 Type N-Channel MOSFET 40 V Enhancement, 3-Pin TO-252
- Infineon OptiMOS-T2 Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-252
- Infineon OptiMOS-T2 Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-252
- Infineon OptiMOS-T2 Type N-Channel MOSFET 30 V Enhancement, 3-Pin TO-252