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    N-Channel MOSFET, 90 A, 30 V, 3-Pin DPAK Infineon IPD90N03S4L02ATMA1

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    Subtotal (1 reel of 2500 units)**

    MYR12,825.00

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    Temporarily out of stock - back order for despatch 29/05/2025, delivery within 4 working days from despatch date*

    * Delivery dates may change based on your chosen quantity and delivery address.

    Units
    Per Unit
    Per Reel**
    2500 - 2500MYR5.13MYR12,825.00
    5000 - 7500MYR5.017MYR12,542.50
    10000 +MYR4.925MYR12,312.50

    **price indicative

    RS Stock No.:
    165-5602
    Mfr. Part No.:
    IPD90N03S4L02ATMA1
    Manufacturer:
    Infineon
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    Manufacturer

    Infineon

    Channel Type

    N

    Maximum Continuous Drain Current

    90 A

    Maximum Drain Source Voltage

    30 V

    Series

    OptiMOS™ -T2

    Package Type

    DPAK (TO-252)

    Mounting Type

    Surface Mount

    Pin Count

    3

    Maximum Drain Source Resistance

    2.6 mΩ

    Channel Mode

    Enhancement

    Maximum Gate Threshold Voltage

    2.2V

    Minimum Gate Threshold Voltage

    1V

    Maximum Power Dissipation

    136 W

    Transistor Configuration

    Single

    Maximum Gate Source Voltage

    -16 V, +16 V

    Maximum Operating Temperature

    +175 °C

    Length

    6.5mm

    Transistor Material

    Si

    Number of Elements per Chip

    1

    Width

    6.22mm

    Typical Gate Charge @ Vgs

    110 nC @ 10 V

    Height

    2.3mm

    Minimum Operating Temperature

    -55 °C

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