Infineon OptiMOS-T2 Type N-Channel MOSFET, 50 A, 40 V Enhancement, 3-Pin TO-252 IPD50N04S408ATMA1
- RS Stock No.:
- 110-7766
- Mfr. Part No.:
- IPD50N04S408ATMA1
- Manufacturer:
- Infineon
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Units | Per Unit | Per Tape* |
|---|---|---|
| 25 - 600 | MYR3.332 | MYR83.30 |
| 625 - 1225 | MYR3.23 | MYR80.75 |
| 1250 + | MYR3.166 | MYR79.15 |
*price indicative
- RS Stock No.:
- 110-7766
- Mfr. Part No.:
- IPD50N04S408ATMA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 50A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | OptiMOS-T2 | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 7.9mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Maximum Power Dissipation Pd | 46W | |
| Typical Gate Charge Qg @ Vgs | 17.2nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Length | 6.5mm | |
| Height | 2.3mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 50A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series OptiMOS-T2 | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 7.9mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Maximum Power Dissipation Pd 46W | ||
Typical Gate Charge Qg @ Vgs 17.2nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Length 6.5mm | ||
Height 2.3mm | ||
Automotive Standard AEC-Q101 | ||
RoHS Status: Not Applicable
Infineon OptiMOS-T2 Series MOSFET, 40V Maximum Drain Source Voltage, 50A Maximum Continuous Drain Current - IPD50N04S408ATMA1
This MOSFET is a 40V N‑channel power transistor designed for high‑current switching in surface‑mounted applications. It operates across a wide temperature span and is built to meet automotive stress demands, making it suitable for robust electronic power stages where efficient conduction and thermal endurance are required.
Features and Benefits:
• 7.9mΩ Rds(on) reduces conduction losses for higher efficiency
• 50A continuous drain current enables heavy current switching
• 17.2nC typical gate charge speeds up switching transitions
• 46W maximum power dissipation manages thermal load in operation
• 20V maximum gate tolerance protects against gate overvoltage
• Enhancement‑mode N‑channel provides straightforward gate‑driven control
• 50A continuous drain current enables heavy current switching
• 17.2nC typical gate charge speeds up switching transitions
• 46W maximum power dissipation manages thermal load in operation
• 20V maximum gate tolerance protects against gate overvoltage
• Enhancement‑mode N‑channel provides straightforward gate‑driven control
Applications
• Suitable for 12V automotive power distribution stages
• Ideal for synchronous buck converter output stages
• Used with motor‑drive half‑bridge circuits
• Can be used for high‑current DC‑DC conversion modules
• Suitable for power management in industrial control units
• Ideal for synchronous buck converter output stages
• Used with motor‑drive half‑bridge circuits
• Can be used for high‑current DC‑DC conversion modules
• Suitable for power management in industrial control units
What ambient range can it withstand during operation?
It functions from -55°C up to 175°C, accommodating extreme cold starts and high‑temperature environments.
How does the package affect assembly and thermal path?
The TO‑252 surface‑mount package offers a compact footprint and a direct thermal path to the PCB for heat dissipation.
What gate drive considerations are necessary for reliable switching?
Drive voltages should remain within ±20V of the gate‑source rating and be sufficient to fully enhance the channel for low Rds(on).
How does the device behave under continuous heavy load?
It supports up to 50A continuous drain current while dissipating up to 46W, requiring appropriate PCB thermal design to maintain junction temperatures.
Related links
- Infineon OptiMOS-T2 Type N-Channel MOSFET 40 V Enhancement, 3-Pin TO-252
- Infineon OptiMOS-T2 Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-252
- Infineon OptiMOS-T2 Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-252 IPD50N06S4L12ATMA2
- Infineon OptiMOS-T2 Type N-Channel MOSFET 40 V Enhancement, 3-Pin TO-252
- Infineon OptiMOS-T2 Type N-Channel MOSFET 40 V Enhancement, 3-Pin TO-252
- Infineon OptiMOS-T2 Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-252
- Infineon OptiMOS-T2 Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-252
- Infineon OptiMOS-T2 Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-252