Microchip Half Bridge mSiC N channel-Channel SiC Power Module, 295 A, 3300 V Enhancement Mode MSCSM330DUM07CD3NG
- RS Stock No.:
- 854-514
- Mfr. Part No.:
- MSCSM330DUM07CD3NG
- Manufacturer:
- Microchip
N
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Subtotal (1 unit)*
MYR5,137.39
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Units | Per Unit |
|---|---|
| 1 + | MYR5,137.39 |
*price indicative
- RS Stock No.:
- 854-514
- Mfr. Part No.:
- MSCSM330DUM07CD3NG
- Manufacturer:
- Microchip
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Microchip | |
| Product Type | SiC Power Module | |
| Channel Type | N channel | |
| Maximum Continuous Drain Current Id | 295A | |
| Maximum Drain Source Voltage Vds | 3300V | |
| Series | mSiC | |
| Mount Type | Heatsink | |
| Channel Mode | Enhancement Mode | |
| Minimum Operating Temperature | -40°C | |
| Maximum Power Dissipation Pd | 1918W | |
| Maximum Operating Temperature | 175°C | |
| Transistor Configuration | Half Bridge | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Microchip | ||
Product Type SiC Power Module | ||
Channel Type N channel | ||
Maximum Continuous Drain Current Id 295A | ||
Maximum Drain Source Voltage Vds 3300V | ||
Series mSiC | ||
Mount Type Heatsink | ||
Channel Mode Enhancement Mode | ||
Minimum Operating Temperature -40°C | ||
Maximum Power Dissipation Pd 1918W | ||
Maximum Operating Temperature 175°C | ||
Transistor Configuration Half Bridge | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Microchip silicon carbide power module combines dual common source functionality with high voltage capabilities, designed for efficient operation and superior performance in demanding applications.
Low R DS(on) ensures minimal power loss
Temperature-independent switching behaviour enhances reliability
Copper baseplate provides excellent thermal management
RoHS compliant for environmentally friendly operations
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