Microchip Half Bridge mSiC N channel-Channel SiC Power Module, 295 A, 3300 V Enhancement Mode MSCSM330AM07CD3NG
- RS Stock No.:
- 854-512
- Mfr. Part No.:
- MSCSM330AM07CD3NG
- Manufacturer:
- Microchip
N
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Subtotal (1 unit)*
MYR5,137.39
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- Shipping from 22 February 2027
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Units | Per Unit |
|---|---|
| 1 + | MYR5,137.39 |
*price indicative
- RS Stock No.:
- 854-512
- Mfr. Part No.:
- MSCSM330AM07CD3NG
- Manufacturer:
- Microchip
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Microchip | |
| Product Type | SiC Power Module | |
| Channel Type | N channel | |
| Maximum Continuous Drain Current Id | 295A | |
| Maximum Drain Source Voltage Vds | 3300V | |
| Series | mSiC | |
| Mount Type | Heatsink | |
| Channel Mode | Enhancement Mode | |
| Maximum Power Dissipation Pd | 1918W | |
| Transistor Configuration | Half Bridge | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Microchip | ||
Product Type SiC Power Module | ||
Channel Type N channel | ||
Maximum Continuous Drain Current Id 295A | ||
Maximum Drain Source Voltage Vds 3300V | ||
Series mSiC | ||
Mount Type Heatsink | ||
Channel Mode Enhancement Mode | ||
Maximum Power Dissipation Pd 1918W | ||
Transistor Configuration Half Bridge | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Microchip silicon carbide power module excels in high-performance applications, delivering exceptional voltage handling and continuous drain current capabilities for demanding environments.
Robust thermal reliability ensures optimal performance at elevated temperatures
Integrated Schottky diode provides zero reverse recovery, enhancing switching behaviour
Designed with a Kelvin source configuration for simplified gate driving
Compact, isolated package allows direct mounting to heatsinks
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