Vishay MXP120A N channel-Channel MOSFET, 36 A, 1.2 kV Enhancement, 4-Pin TO-247AD MXP120A160SL-GE3
- RS Stock No.:
- 847-940
- Mfr. Part No.:
- MXP120A160SL-GE3
- Manufacturer:
- Vishay
N
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MYR43.34
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Units | Per Unit |
|---|---|
| 1 - 9 | MYR43.34 |
| 10 - 49 | MYR26.87 |
| 50 - 99 | MYR16.28 |
| 100 + | MYR15.91 |
*price indicative
- RS Stock No.:
- 847-940
- Mfr. Part No.:
- MXP120A160SL-GE3
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | N channel | |
| Maximum Continuous Drain Current Id | 36A | |
| Maximum Drain Source Voltage Vds | 1.2kV | |
| Series | MXP120A | |
| Package Type | TO-247AD | |
| Mount Type | Through Hole | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 160mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 109W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 25nC | |
| Maximum Gate Source Voltage Vgs | 22V | |
| Forward Voltage Vf | 4.7V | |
| Maximum Operating Temperature | 175°C | |
| Length | 23.6mm | |
| Height | 5.21mm | |
| Width | 16.13mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type N channel | ||
Maximum Continuous Drain Current Id 36A | ||
Maximum Drain Source Voltage Vds 1.2kV | ||
Series MXP120A | ||
Package Type TO-247AD | ||
Mount Type Through Hole | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 160mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 109W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 25nC | ||
Maximum Gate Source Voltage Vgs 22V | ||
Forward Voltage Vf 4.7V | ||
Maximum Operating Temperature 175°C | ||
Length 23.6mm | ||
Height 5.21mm | ||
Width 16.13mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The Vishay N-Channel SiC MOSFET delivers high efficiency and Rapid performance, making it Ideal for demanding applications in power management and energy control systems.
Fast switching speed optimises overall system performance
Short circuit withstand time of 2.5 μs enhances reliability
Rated for a maximum drain-source voltage of 1200 V ensures robust operation
Continuous drain current rating of 18 A supports extensive operational requirements
Minimal on-state resistance measured at 160 mOhm reduces energy loss
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