STMicroelectronics STH280N10F8-6 N channel-Channel Power MOSFET, 292 A, 100 V Enhancement Mode, 3-Pin H2PAK

N

This image is representative of the product range

Bulk discount available
View bulk pricing options

Subtotal (1 unit)*

MYR16.78

Add to Basket
Select or type quantity
In Stock
  • Plus 300 unit(s) shipping from 08 June 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units
Per Unit
1 - 9MYR16.78
10 - 24MYR16.27
25 - 99MYR15.98
100 - 499MYR13.57
500 +MYR12.76

*price indicative

RS Stock No.:
800-458
Mfr. Part No.:
STH280N10F8-6
Manufacturer:
STMicroelectronics
Find similar products by selecting one or more attributes.
Select all

Brand

STMicroelectronics

Channel Type

N channel

Product Type

Power MOSFET

Maximum Continuous Drain Current Id

292A

Maximum Drain Source Voltage Vds

100V

Package Type

H2PAK

Series

STH280N10F8-6

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

1.9mΩ

Channel Mode

Enhancement Mode

Maximum Power Dissipation Pd

341W

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

177nC

Maximum Gate Source Voltage Vgs

4V

Forward Voltage Vf

1.2V

Maximum Operating Temperature

175°C

Width

4.7mm

Standards/Approvals

ECOPACK

Length

10.4mm

Height

15.8mm

Automotive Standard

No

COO (Country of Origin):
CN
The STMicroelectronics 100 V N-channel enhancement mode Power MOSFET designed in STripFET F8 technology featuring an enhanced trench gate structure.

175 °C maximum operating junction temperature

100% avalanche tested

Excellent FoM (figure of merit)

Related links

Be the first to know about our latest products and offers

Email address

The personal information you provide to us when signing up to this mailing list will be processed in line with the Privacy Policy