STMicroelectronics STH280N10F8-2 N channel-Channel Power MOSFET, 292 A, 100 V Enhancement Mode, 3-Pin H2PAK-2
- RS Stock No.:
- 800-457
- Mfr. Part No.:
- STH280N10F8-2
- Manufacturer:
- STMicroelectronics
N
This image is representative of the product range
Bulk discount available
View bulk pricing optionsSubtotal (1 unit)*
MYR16.78
FREE delivery for orders over RM 500.00
Temporarily out of stock
- 300 unit(s) shipping from 08 June 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit |
|---|---|
| 1 - 9 | MYR16.78 |
| 10 - 24 | MYR16.28 |
| 25 - 99 | MYR15.93 |
| 100 - 499 | MYR13.57 |
| 500 + | MYR12.78 |
*price indicative
- RS Stock No.:
- 800-457
- Mfr. Part No.:
- STH280N10F8-2
- Manufacturer:
- STMicroelectronics
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | N channel | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 292A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | STH280N10F8-2 | |
| Package Type | H2PAK-2 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.9mΩ | |
| Channel Mode | Enhancement Mode | |
| Typical Gate Charge Qg @ Vgs | 177nC | |
| Maximum Power Dissipation Pd | 341W | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | 4V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Height | 15.8mm | |
| Width | 4.7mm | |
| Length | 10.4mm | |
| Standards/Approvals | ECOPACK | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type N channel | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 292A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series STH280N10F8-2 | ||
Package Type H2PAK-2 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.9mΩ | ||
Channel Mode Enhancement Mode | ||
Typical Gate Charge Qg @ Vgs 177nC | ||
Maximum Power Dissipation Pd 341W | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs 4V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Height 15.8mm | ||
Width 4.7mm | ||
Length 10.4mm | ||
Standards/Approvals ECOPACK | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The STMicroelectronics 100 V N-channel enhancement mode Power MOSFET designed in STripFET F8 technology featuring an enhanced trench gate structure.
175 °C maximum operating junction temperature
100% avalanche tested
Excellent FoM (figure of merit)
Related links
- STMicroelectronics STH280N10F8-6 N channel-Channel Power MOSFET 100 V Enhancement Mode, 3-Pin H2PAK
- STMicroelectronics STH285N10F8-2AG N channel-Channel Power MOSFET 100 V Enhancement Mode, 3-Pin H2PAK-2
- STMicroelectronics STH285N10F8-6AG N channel-Channel Power MOSFET 100 V Enhancement Mode, 3-Pin H2PAK
- STMicroelectronics STH285N10F8-6AG N channel-Channel Power MOSFET 1200 V Enhancement Mode, 3-Pin H2PAK-2
- STMicroelectronics STH N channel-Channel Power MOSFET 60 V Enhancement, 2-Pin H2PAK-2 STH345N6F7-2
- onsemi NTS4001N N channel-Channel Small Signal MOSFET 30 V Enhancement Mode, 3-Pin SC-70 NTS4001NT1G
- Microchip VN2450 N-Channel Vertical DMOS FET-Channel Single MOSFETs 90 V Enhancement Mode, 3-Pin TO-92-3
- Microchip VN2460 N-Channel Vertical DMOS FET-Channel Single MOSFETs 90 V Enhancement Mode, 3-Pin TO-92-3