STMicroelectronics STH285N10F8-2AG N channel-Channel Power MOSFET, 292 A, 100 V Enhancement Mode, 3-Pin H2PAK-2

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MYR16.78

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Units
Per Unit
1 - 9MYR16.78
10 - 24MYR16.28
25 - 99MYR15.93
100 - 499MYR13.57
500 +MYR12.78

*price indicative

RS Stock No.:
800-459
Mfr. Part No.:
STH285N10F8-2AG
Manufacturer:
STMicroelectronics
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Brand

STMicroelectronics

Product Type

Power MOSFET

Channel Type

N channel

Maximum Continuous Drain Current Id

292A

Maximum Drain Source Voltage Vds

100V

Package Type

H2PAK-2

Series

STH285N10F8-2AG

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

1.9mΩ

Channel Mode

Enhancement Mode

Maximum Gate Source Voltage Vgs

4V

Forward Voltage Vf

1.2V

Typical Gate Charge Qg @ Vgs

177nC

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

341W

Maximum Operating Temperature

175°C

Height

15.8mm

Length

10.4mm

Standards/Approvals

ECOPACK

Width

4.7mm

Automotive Standard

AEC-Q101

COO (Country of Origin):
CN
The STMicroelectronics 100 V N-channel enhancement mode Power MOSFET designed in STripFET F8 technology featuring an enhanced trench gate structure.

AEC-Q101 qualified

175 °C maximum operating junction temperature

100% avalanche tested

Excellent FoM (figure of merit)

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