Vishay SIR5607DP Type P-Channel MOSFET, 90.9 A, 60 V Enhancement, 8-Pin PowerPAK SIR5607DP-T1-UE3
- RS Stock No.:
- 653-196
- Mfr. Part No.:
- SIR5607DP-T1-UE3
- Manufacturer:
- Vishay
N
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MYR11.93
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Tape(s) | Per Tape |
|---|---|
| 1 - 9 | MYR11.93 |
| 10 - 24 | MYR11.60 |
| 25 - 99 | MYR11.34 |
| 100 - 499 | MYR9.65 |
| 500 + | MYR9.06 |
*price indicative
- RS Stock No.:
- 653-196
- Mfr. Part No.:
- SIR5607DP-T1-UE3
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 90.9A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | SIR5607DP | |
| Package Type | PowerPAK | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.007Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 31.7nC | |
| Maximum Power Dissipation Pd | 104W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 150°C | |
| Length | 6.25mm | |
| Standards/Approvals | No | |
| Width | 5.26 mm | |
| Height | 1.12mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 90.9A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series SIR5607DP | ||
Package Type PowerPAK | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.007Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 31.7nC | ||
Maximum Power Dissipation Pd 104W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 150°C | ||
Length 6.25mm | ||
Standards/Approvals No | ||
Width 5.26 mm | ||
Height 1.12mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The Vishay P-channel MOSFET designed for efficient switching in Compact power systems. It supports up to 60 V drain-source voltage and is housed in a PowerPAK SO-8 package. Built using TrenchFET Gen V technology, it offers very low RDS(on), which minimizes voltage drop and conduction losses.
Pb Free
Halogen free
RoHS compliant
Related links
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