Vishay TrenchFET P-Channel MOSFET, -136.7 A, -20 V Enhancement, 8-Pin PowerPAK 1212-8S SISS5207DN-T1-UE3

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MYR4.76

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1 - 24MYR4.76
25 - 99MYR3.13
100 - 499MYR1.63
500 +MYR1.56

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RS Stock No.:
735-204
Mfr. Part No.:
SISS5207DN-T1-UE3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

P-Channel

Product Type

MOSFET

Maximum Continuous Drain Current Id

-136.7A

Maximum Drain Source Voltage Vds

-20V

Package Type

PowerPAK 1212-8S

Series

TrenchFET

Mount Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance Rds

0.011Ω

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

±12 V

Typical Gate Charge Qg @ Vgs

139nC

Maximum Power Dissipation Pd

65.7W

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS Compliant

Length

3.4mm

Height

0.83mm

Width

3.4 mm

Automotive Standard

No

COO (Country of Origin):
CN
The Vishay P channel 20 V MOSFET is tailored for efficient load switching in Compact electronic designs. it combines reliable performance with eco-friendly compliance, ensuring safe and sustainable operation. its low-voltage capability makes it Ideal for modern consumer and automotive applications requiring dependable switching solutions.

Ensures RoHS compliance for environmental safety

Delivers halogen free construction for safer usage

Offers suitability for load switch applications

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