Vishay TrenchFET N channel-Channel MOSFET, 70.6 A, 80 V Enhancement, 8-Pin PowerPAK 1212-8S SISS586DN-T1-UE3
- RS Stock No.:
- 735-242
- Mfr. Part No.:
- SISS586DN-T1-UE3
- Manufacturer:
- Vishay
N
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Subtotal (1 unit)*
MYR6.52
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- Shipping from 12 April 2027
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Units | Per Unit |
|---|---|
| 1 - 9 | MYR6.52 |
| 10 - 24 | MYR4.24 |
| 25 - 99 | MYR2.22 |
| 100 + | MYR2.15 |
*price indicative
- RS Stock No.:
- 735-242
- Mfr. Part No.:
- SISS586DN-T1-UE3
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | N channel | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 70.6A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Series | TrenchFET | |
| Package Type | PowerPAK 1212-8S | |
| Mount Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.0085Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Typical Gate Charge Qg @ Vgs | 19.5nC | |
| Maximum Power Dissipation Pd | 65.7W | |
| Maximum Operating Temperature | 150°C | |
| Length | 3.3mm | |
| Standards/Approvals | RoHS Compliant | |
| Width | 3.3 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type N channel | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 70.6A | ||
Maximum Drain Source Voltage Vds 80V | ||
Series TrenchFET | ||
Package Type PowerPAK 1212-8S | ||
Mount Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.0085Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Typical Gate Charge Qg @ Vgs 19.5nC | ||
Maximum Power Dissipation Pd 65.7W | ||
Maximum Operating Temperature 150°C | ||
Length 3.3mm | ||
Standards/Approvals RoHS Compliant | ||
Width 3.3 mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- DE
The Vishay N channel MOSFET is designed for efficient power switching in a wide range of electronic applications. it delivers reliable performance with thorough gate resistance and unclamped inductive switching testing, ensuring robust operation under demanding conditions. the device supports environmentally responsible designs with RoHS compliant and halogen free construction, making it suitable for modern power management systems.
Supports high reliability operation in demanding environments
Suitable for synchronous rectification applications
Ideal for use as a primary side switch in power converters
Meets RoHS compliant and halogen free requirements
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