Vishay SISS176LDN N-Channel Single MOSFETs, 42.3 A, 70 V Enhancement, 8-Pin PowerPAK

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Subtotal (1 tape of 1 unit)*

MYR4.88

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Tape(s)
Per Tape
1 - 24MYR4.88
25 - 99MYR4.77
100 - 499MYR4.67
500 - 999MYR3.92
1000 +MYR3.71

*price indicative

RS Stock No.:
653-100
Mfr. Part No.:
SISS176LDN-T1-UE3
Manufacturer:
Vishay
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Brand

Vishay

Product Type

Single MOSFETs

Channel Type

N

Maximum Continuous Drain Current Id

42.3A

Maximum Drain Source Voltage Vds

70V

Series

SISS176LDN

Package Type

PowerPAK

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.0125Ω

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

12V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

9.2nC

Forward Voltage Vf

1.1V

Maximum Power Dissipation Pd

39W

Maximum Operating Temperature

150°C

Standards/Approvals

No

Length

3.3mm

Height

410μm

Width

3.3mm

Automotive Standard

No

COO (Country of Origin):
CN
The Vishay TrenchFET Gen IV N-Channel Power MOSFET rated for 70 V drain-source voltage and 42.3 A continuous drain current. It features a Compact PowerPAK 1212-8S surface-mount package, making it Ideal for DC/DC converters, synchronous rectification, motor control, and load switching.

Pb Free

Halogen free

RoHS compliant

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