Vishay SiS N channel-Channel MOSFET, 64 A, 80 V Enhancement, 8-Pin PowerPAK 1212 SiSD5806DN

N
Bulk discount available

Subtotal (1 unit)*

MYR9.32

Add to Basket
Select or type quantity
Temporarily out of stock
  • Shipping from 24 December 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units
Per Unit
1 - 9MYR9.32
10 - 24MYR6.06
25 - 99MYR3.19
100 - 499MYR3.06
500 +MYR3.00

*price indicative

RS Stock No.:
735-136
Mfr. Part No.:
SiSD5806DN
Manufacturer:
Vishay
Find similar products by selecting one or more attributes.
Select all

Brand

Vishay

Channel Type

N channel

Product Type

MOSFET

Maximum Continuous Drain Current Id

64A

Maximum Drain Source Voltage Vds

80V

Series

SiS

Package Type

PowerPAK 1212

Mount Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance Rds

0.0069Ω

Channel Mode

Enhancement

Maximum Power Dissipation Pd

57W

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20V

Forward Voltage Vf

80V

Typical Gate Charge Qg @ Vgs

22nC

Maximum Operating Temperature

150°C

Width

4mm

Length

4mm

Standards/Approvals

RoHS

Height

1mm

Automotive Standard

No

COO (Country of Origin):
DE
The Vishay N-Channel MOSFET rated for 80V drain-source voltage, specifically engineered for low-loss operation in AI power server solutions and high-efficiency DC/DC converters.

64A continuous drain current at TC=25°C

57W maximum power dissipation

33nC maximum total gate charge

Related links