Vishay SIRA18DDP Type N-Channel Single MOSFETs, 40 A, 30 V Enhancement, 8-Pin PowerPAK
- RS Stock No.:
- 653-182
- Mfr. Part No.:
- SIRA18DDP-T1-GE3
- Manufacturer:
- Vishay
N
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MYR1.56
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Tape(s) | Per Tape |
|---|---|
| 1 - 24 | MYR1.56 |
| 25 - 99 | MYR1.37 |
| 100 - 499 | MYR1.24 |
| 500 - 999 | MYR1.04 |
| 1000 + | MYR0.98 |
*price indicative
- RS Stock No.:
- 653-182
- Mfr. Part No.:
- SIRA18DDP-T1-GE3
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | Single MOSFETs | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 40A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | SIRA18DDP | |
| Package Type | PowerPAK | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.00683Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 6.2nC | |
| Maximum Power Dissipation Pd | 17W | |
| Maximum Operating Temperature | 150°C | |
| Width | 6.15 mm | |
| Length | 5.15mm | |
| Height | 1.04mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type Single MOSFETs | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 40A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series SIRA18DDP | ||
Package Type PowerPAK | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.00683Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 6.2nC | ||
Maximum Power Dissipation Pd 17W | ||
Maximum Operating Temperature 150°C | ||
Width 6.15 mm | ||
Length 5.15mm | ||
Height 1.04mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
- COO (Country of Origin):
- TH
The Vishay N-channel MOSFET optimized for high-efficiency switching in Compact power systems. It supports up to 30 V drain-source voltage. Packaged in PowerPAK SO-8, it utilizes TrenchFET Gen IV technology to deliver ultra-low RDS(on), fast switching, and excellent thermal performance.
Pb Free
Halogen free
RoHS compliant
Related links
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