Vishay SISS5208DN Type N-Channel Single MOSFETs, 172 A, 20 V Enhancement, 8-Pin PowerPAK

This image is representative of the product range

Bulk discount available

Subtotal (1 tape of 1 unit)*

MYR4.69

Add to Basket
Select or type quantity
In Stock
  • Plus 6,000 unit(s) shipping from 02 February 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Tape(s)
Per Tape
1 - 24MYR4.69
25 - 99MYR4.56
100 - 499MYR4.43
500 - 999MYR3.78
1000 +MYR3.59

*price indicative

RS Stock No.:
653-149
Mfr. Part No.:
SISS5208DN-T1-GE3
Manufacturer:
Vishay
Find similar products by selecting one or more attributes.
Select all

Brand

Vishay

Channel Type

Type N

Product Type

Single MOSFETs

Maximum Continuous Drain Current Id

172A

Maximum Drain Source Voltage Vds

20V

Package Type

PowerPAK

Series

SISS5208DN

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.0013Ω

Channel Mode

Enhancement

Forward Voltage Vf

1.1V

Typical Gate Charge Qg @ Vgs

24.6nC

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

56.8W

Maximum Gate Source Voltage Vgs

7 V

Maximum Operating Temperature

150°C

Standards/Approvals

No

Length

3.40mm

Height

0.83mm

Width

3.40 mm

Automotive Standard

No

COO (Country of Origin):
CN
The Vishay N-channel MOSFET designed for high-efficiency switching in Compact power systems. It supports up to 20 V drain-source voltage. Packaged in PowerPAK 1212-8S, it utilizes TrenchFET Gen V technology to deliver ultra-low RDS(on), fast switching, and excellent thermal performance.

Pb Free

Halogen free

RoHS compliant

Related links