Vishay SIRA12DDP Type N-Channel Single MOSFETs, 81 A, 30 V Enhancement, 8-Pin PowerPAK

N

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Subtotal (1 tape of 1 unit)*

MYR1.89

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1 - 24MYR1.89
25 - 99MYR1.70
100 - 499MYR1.50
500 - 999MYR1.30
1000 +MYR1.17

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RS Stock No.:
653-145
Mfr. Part No.:
SIRA12DDP-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Product Type

Single MOSFETs

Channel Type

Type N

Maximum Continuous Drain Current Id

81A

Maximum Drain Source Voltage Vds

30V

Series

SIRA12DDP

Package Type

PowerPAK

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.0036Ω

Channel Mode

Enhancement

Forward Voltage Vf

1.1V

Typical Gate Charge Qg @ Vgs

9.2nC

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

38W

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

150°C

Standards/Approvals

No

Length

5.15mm

Height

1.04mm

Width

6.15 mm

Automotive Standard

No

COO (Country of Origin):
TH
The Vishay N-channel MOSFET optimized for high-efficiency switching in Compact power systems. It supports up to 30 V drain-source voltage. Packaged in PowerPAK SO-8, it utilizes TrenchFET Gen IV technology to deliver ultra-low RDS(on), fast switching, and excellent thermal performance.

Pb Free

Halogen free

RoHS compliant

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