P-Channel MOSFET, 4.3 A, 12 V, 3-Pin SOT-23 Infineon IRLML6401TRPBF

RS Stock No.:: 301-316
Mfr. Part No.:: IRLML6401TRPBF
Manufacturer:: Infineon

P-Channel MOSFET, 4.3 A, 12 V, 3-Pin SOT-23 Infineon IRLML6401TRPBF

Bulk discount available

Subtotal (1 pack of 5 units)**

MYR4.20

280 In Global stock for delivery in 4-6 working days, delivery time may vary for certain locations or FTZ*

* Delivery dates may change based on your chosen quantity and delivery address.

FREE delivery for orders over MYR700.00

Units	Per Unit	Per Pack**
5 - 745	MYR0.84	MYR4.20
750 - 1495	MYR0.822	MYR4.11
1500 +	MYR0.804	MYR4.02

**price indicative

RS Stock No.:: 301-316
Mfr. Part No.:: IRLML6401TRPBF
Manufacturer:: Infineon

P-Channel Power MOSFET 12V to 20V, Infineon

Infineon's range of discrete HEXFET® power MOSFETs includes P-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

Infineon HEXFET Series MOSFET, 4.3A Maximum Continuous Drain Current, 1.3W Maximum Power Dissipation - IRLML6401TRPBF

This P-Channel MOSFET is designed for efficiency, making it suitable for applications that demand effective power management. Utilising HEXFET technology, it provides low on-resistance, resulting in reduced power loss during operation. The robust design enables it to endure high temperatures, making it suitable for environments where performance is essential.

Features & Benefits

• Advanced processing for very low on-resistance
• Maximum drain source voltage of 12V
• Continuous drain current capability of 4.3A
• Junction temperature tolerance up to 150°C
• Optimised for fast switching applications, enhancing efficiency
• Compact SOT-23 package for space-efficient circuit designs

Applications

• Battery and load management systems
• Portable electronics where low-profile components are required
• Power management solutions in PCMCIA cards
• Automation systems that require dependable switching
• Electronic circuits needing a compact surface mount design

What is the impact of higher temperatures on performance?

Higher temperatures can increase the on-resistance, potentially reducing efficiency. The device operates safely up to 150°C, maintaining functionality under challenging conditions.

How does the gate threshold voltage affect operation?

The gate threshold voltage, between 0.4V and 0.95V, indicates the minimum voltage necessary to activate the device. Staying within this range ensures effective load switching.

Is this product suited for fast-switching applications?

Yes, the MOSFET facilitates quick transitions between on and off states, reducing energy loss and enhancing circuit responsiveness.

What precautions should be taken during installation?

It’s advisable to use a suitable heat sink when operating near the maximum current rating to prevent overheating. Proper soldering techniques are recommended due to its surface mount design.

Can this device be used for high-power applications?

The device can continuously manage 4.3A

however, evaluating the specific application's power requirements and thermal management is essential for optimal performance.

For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Attribute	Value
Channel Type	P
Maximum Continuous Drain Current	4.3 A
Maximum Drain Source Voltage	12 V
Package Type	Micro
Series	HEXFET
Mounting Type	Surface Mount
Pin Count	3
Maximum Drain Source Resistance	50 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	0.95V
Minimum Gate Threshold Voltage	0.4V
Maximum Power Dissipation	1.3 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-8 V, +8 V
Typical Gate Charge @ Vgs	10 nC @ 5 V
Width	1.4mm
Length	3.04mm
Transistor Material	Si
Number of Elements per Chip	1
Maximum Operating Temperature	+150 °C
Forward Diode Voltage	1.2V
Minimum Operating Temperature	-55 °C
Height	1.02mm