ROHM RJ1 1 Type N-Channel MOSFET, 105 A, 150 V Enhancement, 3-Pin TO-263AB RJ1R10BBHTL1

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MYR24.06

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Per Unit
1 - 9MYR24.06
10 - 99MYR21.66
100 - 499MYR19.98
500 - 999MYR18.49
1000 +MYR15.07

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Packaging Options:
RS Stock No.:
264-880
Mfr. Part No.:
RJ1R10BBHTL1
Manufacturer:
ROHM
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Brand

ROHM

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

105A

Maximum Drain Source Voltage Vds

150V

Series

RJ1

Package Type

TO-263AB

Pin Count

3

Maximum Drain Source Resistance Rds

8.2mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

130nC

Maximum Power Dissipation Pd

181W

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.2V

Maximum Operating Temperature

150°C

Number of Elements per Chip

1

The ROHM Nch 150V 170A TO-263AB power MOSFET with low on-resistance and high power small mold package, suitable for switching.

Low on-resistance

High power small mold package (TO263AB)

Pb-free plating and RoHS compliant

100% UIS tested

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