ROHM RJ1 1 Type N-Channel MOSFET, 80 A, 100 V Enhancement, 3-Pin TO-263AB RJ1P04BBHTL1

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Subtotal (1 tape of 5 units)*

MYR52.51

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Units
Per Unit
Per Tape*
5 - 45MYR10.502MYR52.51
50 - 95MYR9.972MYR49.86
100 - 495MYR9.248MYR46.24
500 - 995MYR8.51MYR42.55
1000 +MYR8.186MYR40.93

*price indicative

Packaging Options:
RS Stock No.:
264-883
Mfr. Part No.:
RJ1P04BBHTL1
Manufacturer:
ROHM
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Brand

ROHM

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

80A

Maximum Drain Source Voltage Vds

100V

Package Type

TO-263AB

Series

RJ1

Pin Count

3

Maximum Drain Source Resistance Rds

8.8mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.2V

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

89W

Typical Gate Charge Qg @ Vgs

38.0nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS Compliant

Number of Elements per Chip

1

The ROHM Nch 100V 80A TO-263AB power MOSFET with low on-resistance and high power small mold package, suitable for switching.

Low on-resistance

High power small mold package (TO263AB)

Pb-free plating and RoHS compliant

100% UIS tested

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