ROHM RJ1 1 Type N-Channel MOSFET, 170 A, 100 V Enhancement, 3-Pin TO-263AB RJ1P10BBHTL1

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Subtotal (1 unit)*

MYR23.15

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Units
Per Unit
1 - 9MYR23.15
10 - 99MYR20.82
100 - 499MYR19.21
500 - 999MYR17.85
1000 +MYR14.48

*price indicative

Packaging Options:
RS Stock No.:
264-878
Mfr. Part No.:
RJ1P10BBHTL1
Manufacturer:
ROHM
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Brand

ROHM

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

170A

Maximum Drain Source Voltage Vds

100V

Series

RJ1

Package Type

TO-263AB

Pin Count

3

Maximum Drain Source Resistance Rds

3.0mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.2V

Typical Gate Charge Qg @ Vgs

135nC

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

189W

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS Compliant

Number of Elements per Chip

1

The ROHM Nch 100V 170A TO-263AB power MOSFET with low on-resistance and high power small mold package, suitable for switching.

Low on-resistance

High power small mold package (TO263AB)

Pb-free plating and RoHS compliant

100% UIS tested

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