IXYS HiperFET, Polar N-Channel MOSFET, 72 A, 600 V, 4-Pin SOT-227 IXFN82N60P

RS Stock No.:: 194-130
Mfr. Part No.:: IXFN82N60P
Manufacturer:: IXYS

IXYS HiperFET, Polar N-Channel MOSFET, 72 A, 600 V, 4-Pin SOT-227 IXFN82N60P

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Subtotal (1 unit)**

MYR172.32

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Units	Per Unit
1 - 2	MYR172.32
3 - 4	MYR168.71
5 +	MYR163.65

**price indicative

RS Stock No.:: 194-130
Mfr. Part No.:: IXFN82N60P
Manufacturer:: IXYS

Datasheet
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	72 A
Maximum Drain Source Voltage	600 V
Package Type	SOT-227B
Series	HiperFET, Polar
Mounting Type	Screw Mount
Pin Count	4
Maximum Drain Source Resistance	75 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	5V
Maximum Power Dissipation	1.04 kW
Transistor Configuration	Single
Maximum Gate Source Voltage	-30 V, +30 V
Maximum Operating Temperature	+150 °C
Typical Gate Charge @ Vgs	240 nC @ 10 V
Transistor Material	Si
Length	38.2mm
Width	25.07mm
Number of Elements per Chip	1
Minimum Operating Temperature	-55 °C
Height	9.6mm

IXYS HiperFET, Polar N-Channel MOSFET, 72 A, 600 V, 4-Pin SOT-227 IXFN82N60P

FREE delivery for orders over MYR500.00

N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series

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