Infineon FP75R12KT4B11BOSA1 IGBT Module 1200 V

This image is representative of the product range

Bulk discount available

Subtotal (1 unit)*

MYR441.97

Add to Basket
Select or type quantity
Temporarily out of stock
  • Shipping from 12 August 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units
Per Unit
1 - 1MYR441.97
2 - 2MYR433.13
3 - 3MYR424.47
4 - 4MYR415.98
5 +MYR407.66

*price indicative

Packaging Options:
RS Stock No.:
244-5848
Mfr. Part No.:
FP75R12KT4B11BOSA1
Manufacturer:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Product Type

IGBT Module

Maximum Collector Emitter Voltage Vceo

1200V

Maximum Power Dissipation Pd

385W

Number of Transistors

7

Maximum Collector Emitter Saturation Voltage VceSAT

2.15V

Maximum Gate Emitter Voltage VGEO

20 V

Minimum Operating Temperature

-40°C

Maximum Operating Temperature

150°C

Width

62 mm

Length

122mm

Height

17mm

Standards/Approvals

RoHS

Series

FP75R12KT4B11B

Automotive Standard

No

The infineon IGBT module is suitable for auxiliary inverters, motor drives, servo drives etc.

Electrical Features

Low switching losses

Tvj op = 150° C

VCEsat with positive temperature coefficient

Low VCEsat

Mechanical features

High power and thermal cycling capability

Integrated NTC temperature sensor

Copper base plate

Pressfit contact technology

Standard housing

Related links

Be the first to know about our latest products and offers

Email address

The personal information you provide to us when signing up to this mailing list will be processed in line with the Privacy Policy