Infineon FP10R12W1T4BOMA1 IGBT Module 1200 V

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Subtotal (1 unit)*

MYR135.18

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Units
Per Unit
1 - 1MYR135.18
2 - 2MYR132.48
3 - 3MYR129.83
4 - 4MYR127.25
5 +MYR124.69

*price indicative

Packaging Options:
RS Stock No.:
244-5384
Mfr. Part No.:
FP10R12W1T4BOMA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

IGBT Module

Maximum Collector Emitter Voltage Vceo

1200V

Number of Transistors

7

Maximum Power Dissipation Pd

105W

Maximum Collector Emitter Saturation Voltage VceSAT

2.25V

Maximum Gate Emitter Voltage VGEO

20 V

Minimum Operating Temperature

-40°C

Maximum Operating Temperature

150°C

Width

33.8 mm

Series

FP10R12W1T4B

Height

12mm

Length

62.8mm

Standards/Approvals

RoHS

Automotive Standard

No

The infineon IGBT module is suitable for auxiliary inverters, motor drives and air conditioning etc.

Electrical features

Low switching losses

Trench IGBT 3

VCEsat with positive temperature coefficient

Low VCEsat

Mechanical features

Al2O3 substrate with low thermal resistance

Compact design

Solder contact technology

Rugged mounting due to integrated mounting clamps

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