Infineon FP100R12KT4B11BOSA1 IGBT Module 1200 V

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Subtotal (1 unit)*

MYR1,249.05

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Units
Per Unit
1 - 1MYR1,249.05
2 - 2MYR1,224.07
3 - 3MYR1,199.58
4 - 4MYR1,175.59
5 +MYR1,152.09

*price indicative

Packaging Options:
RS Stock No.:
244-5377
Mfr. Part No.:
FP100R12KT4B11BOSA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

IGBT Module

Maximum Collector Emitter Voltage Vceo

1200V

Number of Transistors

7

Maximum Power Dissipation Pd

515W

Minimum Operating Temperature

-40°C

Maximum Collector Emitter Saturation Voltage VceSAT

2.1V

Maximum Gate Emitter Voltage VGEO

20 V

Maximum Operating Temperature

150°C

Series

FP100R12KT4B11

Length

122mm

Width

62 mm

Height

17mm

Standards/Approvals

RoHS

Automotive Standard

No

The infineon IGBT module is suitable for auxiliary inverters, motor drives and servo drives etc.

Electrical features

Low switching losses

Tvj op = 150° C

VCEsat with positive temperature coefficient

Low VCEsat

Mechanical features

High power and thermal cycling capability

Integrated NTC temperature sensor

Copper base plate

Pressfit contact technology

Standard housing

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