Infineon IGBT Module 1200 V

This image is representative of the product range

Bulk discount available

Subtotal (1 tray of 10 units)*

MYR6,217.20

Add to Basket
Select or type quantity
In Stock
  • 10 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units
Per Unit
Per Tray*
10 - 10MYR621.72MYR6,217.20
20 - 20MYR609.287MYR6,092.87
30 +MYR597.101MYR5,971.01

*price indicative

RS Stock No.:
244-5374
Mfr. Part No.:
FP100R12KT4B11BOSA1
Manufacturer:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Product Type

IGBT Module

Maximum Collector Emitter Voltage Vceo

1200V

Number of Transistors

7

Maximum Power Dissipation Pd

515W

Maximum Gate Emitter Voltage VGEO

20 V

Minimum Operating Temperature

-40°C

Maximum Collector Emitter Saturation Voltage VceSAT

2.1V

Maximum Operating Temperature

150°C

Width

62 mm

Length

122mm

Height

17mm

Standards/Approvals

RoHS

Series

FP100R12KT4B11

Automotive Standard

No

COO (Country of Origin):
HU
The infineon IGBT module is suitable for auxiliary inverters, motor drives and servo drives etc.

Electrical features

Low switching losses

Tvj op = 150° C

VCEsat with positive temperature coefficient

Low VCEsat

Mechanical features

High power and thermal cycling capability

Integrated NTC temperature sensor

Copper base plate

Pressfit contact technology

Standard housing

Related links