Infineon FP100R12KT4B11BOSA1 IGBT Module 1.2 kV

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Subtotal (1 tray of 10 units)*

MYR4,643.59

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10 - 10MYR464.359MYR4,643.59-
20 - 20MYR455.073MYR4,550.73MYR185.72
30 +MYR445.971MYR4,459.71MYR551.64

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RS Stock No.:
244-5374
Mfr. Part No.:
FP100R12KT4B11BOSA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

IGBT Module

Maximum Collector Emitter Voltage Vceo

1.2kV

Maximum Power Dissipation Pd

515W

Number of Transistors

7

Maximum Collector Emitter Saturation Voltage VceSAT

2.1V

Maximum Gate Emitter Voltage VGEO

20 V

Minimum Operating Temperature

-40°C

Maximum Operating Temperature

150°C

Series

FP100R12KT4B11

Standards/Approvals

RoHS

Width

62mm

Length

122mm

Height

17mm

Automotive Standard

No

COO (Country of Origin):
HU
The infineon IGBT module is suitable for auxiliary inverters, motor drives and servo drives etc.

Electrical features

Low switching losses

Tvj op = 150° C

VCEsat with positive temperature coefficient

Low VCEsat

Mechanical features

High power and thermal cycling capability

Integrated NTC temperature sensor

Copper base plate

Pressfit contact technology

Standard housing

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