Infineon FP75R12KT4BOSA1 IGBT Module, 75 A 1200 V EconoPIM

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Subtotal (1 tray of 10 units)*

MYR7,449.01

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Units
Per Unit
Per Tray*
10 - 10MYR744.901MYR7,449.01
20 - 20MYR730.004MYR7,300.04
30 +MYR715.402MYR7,154.02

*price indicative

RS Stock No.:
244-5851
Mfr. Part No.:
FP75R12KT4BOSA1
Manufacturer:
Infineon
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Brand

Infineon

Maximum Continuous Collector Current

75 A

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

±20V

Number of Transistors

7

Package Type

EconoPIM

The infineon IGBT module the maximum rated collector emitter voltage is 1200 V and toatal power dissipation is 355 W, maximum gate threshold voltage is 6.5 V.

Internal isolation basic insulation (class 1, IEC 61140)
Gate-emitter peak voltage + /- 20 V
Collector-emitter saturation voltage 2.15 V
Gate-emitter leakage current 400 nA

For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.


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