Infineon FP15R12W1T4BOMA1 IGBT Module 1200 V
- RS Stock No.:
- 244-5387
- Mfr. Part No.:
- FP15R12W1T4BOMA1
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
Subtotal (1 unit)*
MYR215.27
FREE delivery for orders over RM 500.00
In Stock
- 23 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit |
|---|---|
| 1 - 1 | MYR215.27 |
| 2 - 2 | MYR210.95 |
| 3 - 3 | MYR206.70 |
| 4 - 4 | MYR202.60 |
| 5 + | MYR198.55 |
*price indicative
- RS Stock No.:
- 244-5387
- Mfr. Part No.:
- FP15R12W1T4BOMA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | IGBT Module | |
| Maximum Collector Emitter Voltage Vceo | 1200V | |
| Number of Transistors | 7 | |
| Maximum Power Dissipation Pd | 130W | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2.25V | |
| Maximum Operating Temperature | 150°C | |
| Series | FP15R12W1T4B | |
| Height | 12mm | |
| Standards/Approvals | RoHS | |
| Length | 62.8mm | |
| Width | 33.8 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type IGBT Module | ||
Maximum Collector Emitter Voltage Vceo 1200V | ||
Number of Transistors 7 | ||
Maximum Power Dissipation Pd 130W | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Minimum Operating Temperature -40°C | ||
Maximum Collector Emitter Saturation Voltage VceSAT 2.25V | ||
Maximum Operating Temperature 150°C | ||
Series FP15R12W1T4B | ||
Height 12mm | ||
Standards/Approvals RoHS | ||
Length 62.8mm | ||
Width 33.8 mm | ||
Automotive Standard No | ||
The infineon IGBT module is suitable for auxiliary inverters, motor drives and air conditioning etc.
Electrical features
Low switching losses, low inductive design
Trench IGBT 3
VCEsat with positive temperature coefficient
Low VCEsat
Mechanical features
Al2O3 substrate with low thermal resistance
Compact design
Solder contact technology
Rugged mounting due to integrated mounting clamps
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