onsemi AFGB40T65SQDN, Type N-Channel IGBT, 80 A 650 V, 3-Pin TO-263, Surface
- RS Stock No.:
- 185-8642
- Mfr. Part No.:
- AFGB40T65SQDN
- Manufacturer:
- onsemi
This image is representative of the product range
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Subtotal (1 pack of 2 units)*
MYR46.69
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- 3,124 left, ready to ship from another location
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Units | Per Unit | Per Pack* |
|---|---|---|
| 2 - 198 | MYR23.345 | MYR46.69 |
| 200 - 398 | MYR20.865 | MYR41.73 |
| 400 + | MYR17.99 | MYR35.98 |
*price indicative
- RS Stock No.:
- 185-8642
- Mfr. Part No.:
- AFGB40T65SQDN
- Manufacturer:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Maximum Continuous Collector Current Ic | 80A | |
| Product Type | IGBT | |
| Maximum Collector Emitter Voltage Vceo | 650V | |
| Maximum Power Dissipation Pd | 238W | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.6V | |
| Maximum Gate Emitter Voltage VGEO | ±20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS, Pb-Free | |
| Height | 4.06mm | |
| Length | 9.65mm | |
| Width | 10.67 mm | |
| Automotive Standard | AEC-Q101 | |
| Energy Rating | 22.3mJ | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Maximum Continuous Collector Current Ic 80A | ||
Product Type IGBT | ||
Maximum Collector Emitter Voltage Vceo 650V | ||
Maximum Power Dissipation Pd 238W | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Channel Type Type N | ||
Pin Count 3 | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.6V | ||
Maximum Gate Emitter Voltage VGEO ±20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS, Pb-Free | ||
Height 4.06mm | ||
Length 9.65mm | ||
Width 10.67 mm | ||
Automotive Standard AEC-Q101 | ||
Energy Rating 22.3mJ | ||
Non Compliant
- COO (Country of Origin):
- CN
Using the novel field stop 4th generation IGBT technology. AFGB40T65SQDN offers the optimum performance with both low conduction loss and switching loss for a high efficiency operation in various applications.
VCE(sat) = 1.6 V (typ.) @ IC = 40 A
Low VF soft recovery co-packaged diode
For automotive
Low conduction loss
Low noise and conduction loss
Applications
Automotive On Board Charge
Automotive DC/DC converter for HEV
End Products
EV/PHEV
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