onsemi FGAF40S65AQ, Type N-Channel IGBT, 80 A 650 V, 3-Pin TO-3PF, Through Hole
- RS Stock No.:
- 185-8956
- Mfr. Part No.:
- FGAF40S65AQ
- Manufacturer:
- onsemi
This image is representative of the product range
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Subtotal (1 pack of 3 units)*
MYR45.039
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Last RS stock
- Final 513 unit(s), ready to ship from another location
Units | Per Unit | Per Pack* |
|---|---|---|
| 3 - 87 | MYR15.013 | MYR45.04 |
| 90 - 177 | MYR12.747 | MYR38.24 |
| 180 + | MYR11.10 | MYR33.30 |
*price indicative
- RS Stock No.:
- 185-8956
- Mfr. Part No.:
- FGAF40S65AQ
- Manufacturer:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | IGBT | |
| Maximum Continuous Collector Current Ic | 80A | |
| Maximum Collector Emitter Voltage Vceo | 650V | |
| Maximum Power Dissipation Pd | 94W | |
| Package Type | TO-3PF | |
| Mount Type | Through Hole | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Maximum Gate Emitter Voltage VGEO | ±20 V | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.6V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | Pb-Free and is RoHS | |
| Series | Trench | |
| Length | 19.1mm | |
| Width | 15.3 mm | |
| Energy Rating | 325mJ | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type IGBT | ||
Maximum Continuous Collector Current Ic 80A | ||
Maximum Collector Emitter Voltage Vceo 650V | ||
Maximum Power Dissipation Pd 94W | ||
Package Type TO-3PF | ||
Mount Type Through Hole | ||
Channel Type Type N | ||
Pin Count 3 | ||
Maximum Gate Emitter Voltage VGEO ±20 V | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.6V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals Pb-Free and is RoHS | ||
Series Trench | ||
Length 19.1mm | ||
Width 15.3 mm | ||
Energy Rating 325mJ | ||
Automotive Standard No | ||
Non Compliant
- COO (Country of Origin):
- KR
Using novel field stop IGBT technology, ON semiconductor’s new series of field stop 4th generation of RC IGBTs offer the optimum performance for converter PFC stage of consummer and industrial applications.
Maximum junction temperature : TJ = 175°C
Positive temperaure co-efficient for easy parallel operating
High current capability
Low saturation voltage: VCE(sat) = 1.6V(Typ.) @ IC = 40A
High input impedance
100% of the Parts tested for ILM
Fast switching
Tightened parameter distribution
IGBT with monolithic reverse conducting diode
Applications
Consumer Appliances
PFC, Welder
Industrial application