onsemi, Type N-Channel IGBT, 80 A 650 V, 3-Pin TO-3PF, Through Hole

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Subtotal (1 tube of 360 units)*

MYR3,838.32

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360 - 360MYR10.662MYR3,838.32
720 - 1080MYR10.498MYR3,779.28
1440 +MYR10.293MYR3,705.48

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RS Stock No.:
185-7999
Mfr. Part No.:
FGAF40S65AQ
Manufacturer:
onsemi
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Brand

onsemi

Product Type

IGBT

Maximum Continuous Collector Current Ic

80A

Maximum Collector Emitter Voltage Vceo

650V

Maximum Power Dissipation Pd

94W

Package Type

TO-3PF

Mount Type

Through Hole

Channel Type

Type N

Pin Count

3

Maximum Gate Emitter Voltage VGEO

±20 V

Maximum Collector Emitter Saturation Voltage VceSAT

1.6V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Width

15.3 mm

Length

19.1mm

Standards/Approvals

Pb-Free and is RoHS

Series

Trench

Automotive Standard

No

Energy Rating

325mJ

Non Compliant

COO (Country of Origin):
KR
Using novel field stop IGBT technology, ON semiconductor’s new series of field stop 4th generation of RC IGBTs offer the optimum performance for converter PFC stage of consummer and industrial applications.

Maximum junction temperature : TJ = 175°C

Positive temperaure co-efficient for easy parallel operating

High current capability

Low saturation voltage: VCE(sat) = 1.6V(Typ.) @ IC = 40A

High input impedance

100% of the Parts tested for ILM

Fast switching

Tightened parameter distribution

IGBT with monolithic reverse conducting diode

Applications

Consumer Appliances

PFC, Welder

Industrial application

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