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    Infineon IKW75N65ES5XKSA1 IGBT, 80 A 650 V, 3-Pin TO-247, Through Hole

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    Subtotal (1 pack of 10 units)**

    MYR257.26

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    Temporarily out of stock - back order for despatch 17/07/2025, delivery within 4 working days from despatch date*

    * Delivery dates may change based on your chosen quantity and delivery address.

    Units
    Per Unit
    Per Pack**
    10 +MYR25.726MYR257.26

    **price indicative

    RS Stock No.:
    144-1203
    Mfr. Part No.:
    IKW75N65ES5XKSA1
    Manufacturer:
    Infineon
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    Manufacturer

    Infineon

    Maximum Continuous Collector Current

    80 A

    Maximum Collector Emitter Voltage

    650 V

    Maximum Gate Emitter Voltage

    ±20 V, ±30V

    Maximum Power Dissipation

    395 W

    Number of Transistors

    1

    Package Type

    TO-247

    Mounting Type

    Through Hole

    Channel Type

    N

    Pin Count

    3

    Switching Speed

    30kHz

    Transistor Configuration

    Single

    Dimensions

    16.13 x 5.21 x 21.1mm

    Maximum Operating Temperature

    +175 °C

    Minimum Operating Temperature

    -40 °C

    Gate Capacitance

    4500pF

    Energy Rating

    3.35mJ

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