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    Infineon IKW50N65ES5XKSA1 IGBT, 80 A 650 V, 3-Pin TO-247, Through Hole

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    Bulk discount available

    Subtotal (1 tube of 240 units)**

    MYR4,133.76

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    240 In Global stock for delivery in 4-6 working days, delivery time may vary for certain locations or FTZ*

    * Delivery dates may change based on your chosen quantity and delivery address.

    Units
    Per Unit
    Per Tube**
    240 - 240MYR17.224MYR4,133.76
    480 - 720MYR16.845MYR4,042.80
    960 +MYR16.535MYR3,968.40

    **price indicative

    Packaging Options:
    RS Stock No.:
    133-8575
    Mfr. Part No.:
    IKW50N65ES5XKSA1
    Manufacturer:
    Infineon
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    Manufacturer

    Infineon

    Maximum Continuous Collector Current

    80 A

    Maximum Collector Emitter Voltage

    650 V

    Maximum Gate Emitter Voltage

    ±20V

    Maximum Power Dissipation

    274 W

    Number of Transistors

    1

    Package Type

    TO-247

    Mounting Type

    Through Hole

    Channel Type

    N

    Pin Count

    3

    Switching Speed

    30kHz

    Transistor Configuration

    Single

    Dimensions

    16.13 x 5.21 x 21.1mm

    Energy Rating

    1.78mJ

    Maximum Operating Temperature

    +175 °C

    Gate Capacitance

    3100pF

    Minimum Operating Temperature

    -40 °C

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