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Infineon IHW50N65R5XKSA1 IGBT, 80 A 650 V, 3-Pin PG-TO247-3

RS Stock No.:: 215-6645
Mfr. Part No.:: IHW50N65R5XKSA1
Manufacturer:: Infineon

Infineon IHW50N65R5XKSA1 IGBT, 80 A 650 V, 3-Pin PG-TO247-3

Bulk discount available

Subtotal (1 tube of 30 units)*

MYR237.42

FREE delivery for orders over RM 500.00

Temporarily out of stock

Shipping from 13 July 2026

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per Unit	Per Tube*
30 - 60	MYR7.914	MYR237.42
90 - 120	MYR7.596	MYR227.88
150 +	MYR7.40	MYR222.00

*price indicative

RS Stock No.:: 215-6645
Mfr. Part No.:: IHW50N65R5XKSA1
Manufacturer:: Infineon

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Maximum Continuous Collector Current	80 A
	Maximum Collector Emitter Voltage	650 V
	Maximum Gate Emitter Voltage	±20V
	Maximum Power Dissipation	282 W
	Package Type	PG-TO247-3
	Pin Count	3

	Select all
	Brand Infineon
	Maximum Continuous Collector Current 80 A
	Maximum Collector Emitter Voltage 650 V
	Maximum Gate Emitter Voltage ±20V
	Maximum Power Dissipation 282 W
	Package Type PG-TO247-3
	Pin Count 3

Datasheet-IHW50N65R5XKSA1

The Infineon reverse conducting insulated-gate bipolar transistor with monolithic body diode.

High Efficiency
Low Switching Losses
Increased Reliability
Low Electromagnetic Interference

Infineon IHW50N65R5XKSA1 IGBT, 80 A 650 V, 3-Pin PG-TO247-3

FREE delivery for orders over RM 500.00

For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.

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