Name: STMicroelectronics STGWT60H65DFB IGBT, 80 A 650 V, 3-Pin TO-3P, Through Hole
Brand: STMicroelectronics
SKU: 168-8686
Price: 16.63 MYR
Availability: BackOrder

IGBT Discretes, STMicroelectronics

For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.

IGBT Discretes & Modules, STMicroelectronics

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Select all	Attribute	Value
	Manufacturer	STMicroelectronics
	Maximum Continuous Collector Current	80 A
	Maximum Collector Emitter Voltage	650 V
	Maximum Gate Emitter Voltage	±20V
	Maximum Power Dissipation	375 W
	Package Type	TO-3P
	Mounting Type	Through Hole
	Channel Type	N
	Pin Count	3
	Transistor Configuration	Single
	Dimensions	15.8 x 5 x 20.1mm
	Minimum Operating Temperature	-55 °C
	Maximum Operating Temperature	+175 °C

	Select all
	Manufacturer STMicroelectronics
	Maximum Continuous Collector Current 80 A
	Maximum Collector Emitter Voltage 650 V
	Maximum Gate Emitter Voltage ±20V
	Maximum Power Dissipation 375 W
	Package Type TO-3P
	Mounting Type Through Hole
	Channel Type N
	Pin Count 3
	Transistor Configuration Single
	Dimensions 15.8 x 5 x 20.1mm
	Minimum Operating Temperature -55 °C
	Maximum Operating Temperature +175 °C

STMicroelectronics STGWT60H65DFB IGBT, 80 A 650 V, 3-Pin TO-3P, Through Hole

FREE delivery for orders over MYR700.00

IGBT Discretes, STMicroelectronics