N-Channel MOSFET, 2.6 A, 30 V, 3-Pin SOT-323 Diodes Inc DMN3067LW-7
- RS Stock No.:
- 921-1094
- Mfr. Part No.:
- DMN3067LW-7
- Manufacturer:
- DiodesZetex
Bulk discount available
Subtotal (1 pack of 50 units)**
MYR33.55
2050 In Global stock for delivery in 4-6 working days, delivery time may vary for certain locations or FTZ*
* Delivery dates may change based on your chosen quantity and delivery address.
FREE delivery for orders over MYR700.00
Units | Per Unit | Per Pack** |
---|---|---|
50 - 700 | MYR0.671 | MYR33.55 |
750 - 1450 | MYR0.553 | MYR27.65 |
1500 + | MYR0.432 | MYR21.60 |
**price indicative
- RS Stock No.:
- 921-1094
- Mfr. Part No.:
- DMN3067LW-7
- Manufacturer:
- DiodesZetex
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Manufacturer | DiodesZetex | |
Channel Type | N | |
Maximum Continuous Drain Current | 2.6 A | |
Maximum Drain Source Voltage | 30 V | |
Package Type | SOT-323 | |
Mounting Type | Surface Mount | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 98 mΩ | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 1.5V | |
Minimum Gate Threshold Voltage | 0.5V | |
Maximum Power Dissipation | 1.1 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -12 V, +12 V | |
Width | 1.35mm | |
Maximum Operating Temperature | +150 °C | |
Length | 2.2mm | |
Typical Gate Charge @ Vgs | 4.6 nC @ 4.5 V | |
Transistor Material | Si | |
Number of Elements per Chip | 1 | |
Height | 1mm | |
Forward Diode Voltage | 1.2V | |
Minimum Operating Temperature | -55 °C | |
Select all | ||
---|---|---|
Manufacturer DiodesZetex | ||
Channel Type N | ||
Maximum Continuous Drain Current 2.6 A | ||
Maximum Drain Source Voltage 30 V | ||
Package Type SOT-323 | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 98 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 1.5V | ||
Minimum Gate Threshold Voltage 0.5V | ||
Maximum Power Dissipation 1.1 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -12 V, +12 V | ||
Width 1.35mm | ||
Maximum Operating Temperature +150 °C | ||
Length 2.2mm | ||
Typical Gate Charge @ Vgs 4.6 nC @ 4.5 V | ||
Transistor Material Si | ||
Number of Elements per Chip 1 | ||
Height 1mm | ||
Forward Diode Voltage 1.2V | ||
Minimum Operating Temperature -55 °C | ||
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