DiodesZetex DMN3065LW Type N-Channel MOSFET, 4 A, 30 V Enhancement, 3-Pin SC-70
- RS Stock No.:
- 165-8329
- Mfr. Part No.:
- DMN3065LW-7
- Manufacturer:
- DiodesZetex
This image is representative of the product range
Bulk discount available
Subtotal (1 reel of 3000 units)*
MYR1,359.00
FREE delivery for orders over RM 500.00
In Stock
- 3,000 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Reel* |
|---|---|---|
| 3000 - 3000 | MYR0.453 | MYR1,359.00 |
| 6000 - 9000 | MYR0.443 | MYR1,329.00 |
| 12000 + | MYR0.435 | MYR1,305.00 |
*price indicative
- RS Stock No.:
- 165-8329
- Mfr. Part No.:
- DMN3065LW-7
- Manufacturer:
- DiodesZetex
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 4A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | SC-70 | |
| Series | DMN3065LW | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 85mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | 12 V | |
| Maximum Power Dissipation Pd | 770mW | |
| Typical Gate Charge Qg @ Vgs | 11.7nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Length | 2.2mm | |
| Height | 1mm | |
| Standards/Approvals | No | |
| Width | 1.35 mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 4A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type SC-70 | ||
Series DMN3065LW | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 85mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs 12 V | ||
Maximum Power Dissipation Pd 770mW | ||
Typical Gate Charge Qg @ Vgs 11.7nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Length 2.2mm | ||
Height 1mm | ||
Standards/Approvals No | ||
Width 1.35 mm | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- CN
N-Channel MOSFET, 30V, Diodes Inc
MOSFET Transistors, Diodes Inc.
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