DiodesZetex DMN3060LWQ Type N-Channel MOSFET, 2.6 A, 30 V Enhancement, 3-Pin SOT-323
- RS Stock No.:
- 213-9177
- Mfr. Part No.:
- DMN3060LWQ-7
- Manufacturer:
- DiodesZetex
This image is representative of the product range
Bulk discount available
Subtotal (1 reel of 3000 units)*
MYR1,377.00
FREE delivery for orders over RM 500.00
In Stock
- 3,000 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Reel* |
|---|---|---|
| 3000 - 3000 | MYR0.459 | MYR1,377.00 |
| 6000 - 9000 | MYR0.449 | MYR1,347.00 |
| 12000 + | MYR0.44 | MYR1,320.00 |
*price indicative
- RS Stock No.:
- 213-9177
- Mfr. Part No.:
- DMN3060LWQ-7
- Manufacturer:
- DiodesZetex
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 2.6A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | SOT-323 | |
| Series | DMN3060LWQ | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 600mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 5.6nC | |
| Maximum Gate Source Voltage Vgs | 12 V | |
| Maximum Power Dissipation Pd | 0.64W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 2.2mm | |
| Width | 1.35 mm | |
| Height | 1.1mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 2.6A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type SOT-323 | ||
Series DMN3060LWQ | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 600mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 5.6nC | ||
Maximum Gate Source Voltage Vgs 12 V | ||
Maximum Power Dissipation Pd 0.64W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 2.2mm | ||
Width 1.35 mm | ||
Height 1.1mm | ||
Automotive Standard AEC-Q101 | ||
The DiodesZetex DMN3060LWQ series is N-channel MOSFET. It is used in general purpose interfacing switch, power management functions and analogue switch.
Low input capacitance
Fast switching speed
Related links
- DiodesZetex DMN3060LWQ Type N-Channel MOSFET 30 V Enhancement, 3-Pin SOT-323 DMN3060LWQ-7
- DiodesZetex DMN3060LW Type N-Channel MOSFET 30 V Enhancement, 3-Pin SOT-323
- DiodesZetex DMN3060LW Type N-Channel MOSFET 30 V Enhancement, 3-Pin SOT-323 DMN3060LW-7
- DiodesZetex DMN2055UW Type N-Channel MOSFET 20 V Enhancement, 3-Pin SOT-323
- DiodesZetex DMN2055UWQ Type N-Channel MOSFET 20 V Enhancement, 3-Pin SOT-323
- DiodesZetex DMN Type N-Channel MOSFET 20 V Enhancement, 3-Pin SOT-323
- DiodesZetex DMN Type N-Channel MOSFET 20 V Enhancement, 3-Pin SOT-323
- DiodesZetex DMN3061SWQ Type N-Channel MOSFET 30 V Enhancement, 3-Pin SOT-323