DiodesZetex Isolated 2 Type P, Type N-Channel MOSFET, 8.2 A, 30 V Enhancement, 8-Pin SOIC DMC3026LSD-13
- RS Stock No.:
- 921-1029
- Mfr. Part No.:
- DMC3026LSD-13
- Manufacturer:
- DiodesZetex
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 20 units)*
MYR45.42
FREE delivery for orders over RM 500.00
In Stock
- 20 unit(s) ready to ship from another location
- Plus 1,300 unit(s) shipping from 13 January 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Pack* |
|---|---|---|
| 20 - 620 | MYR2.271 | MYR45.42 |
| 640 - 1240 | MYR2.159 | MYR43.18 |
| 1260 + | MYR1.763 | MYR35.26 |
*price indicative
- RS Stock No.:
- 921-1029
- Mfr. Part No.:
- DMC3026LSD-13
- Manufacturer:
- DiodesZetex
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Channel Type | Type P, Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 8.2A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | SOIC | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 29mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 6nC | |
| Maximum Power Dissipation Pd | 1.6W | |
| Minimum Operating Temperature | 150°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 0.7V | |
| Transistor Configuration | Isolated | |
| Maximum Operating Temperature | -55°C | |
| Standards/Approvals | MIL-STD-202, AEC-Q101, UL 94V-0, RoHS, J-STD-020 | |
| Length | 4.95mm | |
| Height | 1.5mm | |
| Width | 3.95 mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Channel Type Type P, Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 8.2A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type SOIC | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 29mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 6nC | ||
Maximum Power Dissipation Pd 1.6W | ||
Minimum Operating Temperature 150°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 0.7V | ||
Transistor Configuration Isolated | ||
Maximum Operating Temperature -55°C | ||
Standards/Approvals MIL-STD-202, AEC-Q101, UL 94V-0, RoHS, J-STD-020 | ||
Length 4.95mm | ||
Height 1.5mm | ||
Width 3.95 mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard AEC-Q101 | ||
Dual N/P-Channel MOSFET, Diodes Inc.
MOSFET Transistors, Diodes Inc.
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