Diodes Inc Dual N/P-Channel MOSFET, 8.2 A, 30 V, 8-Pin SOIC DMC3026LSD-13
- RS Stock No.:
- 170-9039
- Mfr. Part No.:
- DMC3026LSD-13
- Manufacturer:
- DiodesZetex
Bulk discount available
Subtotal (1 reel of 2500 units)**
MYR2,925.00
Temporarily out of stock - back order for despatch 19/11/2025, delivery within 4 working days from despatch date*
* Delivery dates may change based on your chosen quantity and delivery address.
FREE delivery for orders over MYR500.00
Units | Per Unit | Per Reel** |
---|---|---|
2500 - 2500 | MYR1.17 | MYR2,925.00 |
5000 - 7500 | MYR1.144 | MYR2,860.00 |
10000 + | MYR1.123 | MYR2,807.50 |
**price indicative
- RS Stock No.:
- 170-9039
- Mfr. Part No.:
- DMC3026LSD-13
- Manufacturer:
- DiodesZetex
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | DiodesZetex | |
Channel Type | N, P | |
Maximum Continuous Drain Current | 8.2 A | |
Maximum Drain Source Voltage | 30 V | |
Package Type | SOIC | |
Mounting Type | Surface Mount | |
Pin Count | 8 | |
Maximum Drain Source Resistance | 29 mΩ | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 3V | |
Minimum Gate Threshold Voltage | 1V | |
Maximum Power Dissipation | 1.6 W | |
Transistor Configuration | Isolated | |
Maximum Gate Source Voltage | -20 V, +20 V | |
Maximum Operating Temperature | +150 °C | |
Width | 3.95mm | |
Typical Gate Charge @ Vgs | 13.2 nC @ 10 V | |
Length | 4.95mm | |
Transistor Material | Si | |
Number of Elements per Chip | 2 | |
Height | 1.5mm | |
Minimum Operating Temperature | -55 °C | |
Forward Diode Voltage | 1.2V | |
Select all | ||
---|---|---|
Brand DiodesZetex | ||
Channel Type N, P | ||
Maximum Continuous Drain Current 8.2 A | ||
Maximum Drain Source Voltage 30 V | ||
Package Type SOIC | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 29 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 3V | ||
Minimum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 1.6 W | ||
Transistor Configuration Isolated | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Maximum Operating Temperature +150 °C | ||
Width 3.95mm | ||
Typical Gate Charge @ Vgs 13.2 nC @ 10 V | ||
Length 4.95mm | ||
Transistor Material Si | ||
Number of Elements per Chip 2 | ||
Height 1.5mm | ||
Minimum Operating Temperature -55 °C | ||
Forward Diode Voltage 1.2V | ||
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