DiodesZetex Isolated 2 Type P, Type N-Channel MOSFET, 8.2 A, 30 V Enhancement, 8-Pin SOIC
- RS Stock No.:
- 170-9039
- Mfr. Part No.:
- DMC3026LSD-13
- Manufacturer:
- DiodesZetex
This image is representative of the product range
Bulk discount available
Subtotal (1 reel of 2500 units)*
MYR3,160.00
FREE delivery for orders over RM 500.00
Temporarily out of stock
- Shipping from 03 August 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Reel* |
|---|---|---|
| 2500 - 2500 | MYR1.264 | MYR3,160.00 |
| 5000 - 7500 | MYR1.236 | MYR3,090.00 |
| 10000 + | MYR1.213 | MYR3,032.50 |
*price indicative
- RS Stock No.:
- 170-9039
- Mfr. Part No.:
- DMC3026LSD-13
- Manufacturer:
- DiodesZetex
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Product Type | MOSFET | |
| Channel Type | Type P, Type N | |
| Maximum Continuous Drain Current Id | 8.2A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | SOIC | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 29mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 6nC | |
| Minimum Operating Temperature | 150°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 1.6W | |
| Forward Voltage Vf | 0.7V | |
| Transistor Configuration | Isolated | |
| Maximum Operating Temperature | -55°C | |
| Height | 1.5mm | |
| Standards/Approvals | MIL-STD-202, AEC-Q101, UL 94V-0, RoHS, J-STD-020 | |
| Length | 4.95mm | |
| Width | 3.95 mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Product Type MOSFET | ||
Channel Type Type P, Type N | ||
Maximum Continuous Drain Current Id 8.2A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type SOIC | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 29mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 6nC | ||
Minimum Operating Temperature 150°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 1.6W | ||
Forward Voltage Vf 0.7V | ||
Transistor Configuration Isolated | ||
Maximum Operating Temperature -55°C | ||
Height 1.5mm | ||
Standards/Approvals MIL-STD-202, AEC-Q101, UL 94V-0, RoHS, J-STD-020 | ||
Length 4.95mm | ||
Width 3.95 mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- CN
Dual N/P-Channel MOSFET, Diodes Inc.
MOSFET Transistors, Diodes Inc.
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