IXYS HiperFET, Polar N-Channel MOSFET, 26 A, 1200 V, 3-Pin TO-264 IXFK26N120P

RS Stock No.:: 920-0877
Mfr. Part No.:: IXFK26N120P
Manufacturer:: IXYS

IXYS HiperFET, Polar N-Channel MOSFET, 26 A, 1200 V, 3-Pin TO-264 IXFK26N120P

Subtotal (1 tube of 25 units)**

MYR3,927.30

475 In Global stock for delivery in 4-6 working days, delivery time may vary for certain locations or FTZ*

* Delivery dates may change based on your chosen quantity and delivery address.

FREE delivery for orders over MYR500.00

Real time qty checker

Units	Per Unit	Per Tube**
25 +	MYR157.092	MYR3,927.30

**price indicative

RS Stock No.:: 920-0877
Mfr. Part No.:: IXFK26N120P
Manufacturer:: IXYS

Datasheet
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	26 A
Maximum Drain Source Voltage	1200 V
Package Type	TO-264
Series	HiperFET, Polar
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	460 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	6.5V
Maximum Power Dissipation	960 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-30 V, +30 V
Transistor Material	Si
Number of Elements per Chip	1
Maximum Operating Temperature	+150 °C
Typical Gate Charge @ Vgs	225 nC @ 10 V
Length	19.96mm
Width	5.13mm
Height	26.16mm
Minimum Operating Temperature	-55 °C

IXYS HiperFET, Polar N-Channel MOSFET, 26 A, 1200 V, 3-Pin TO-264 IXFK26N120P

FREE delivery for orders over MYR500.00

N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series

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