IXYS Type N-Channel MOSFET, 26 A, 1200 V Enhancement, 3-Pin TO-264

This image is representative of the product range

Subtotal (1 tube of 25 units)*

MYR3,927.30

Add to Basket
Select or type quantity
In Stock
  • 400 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per Unit
Per Tube*
25 +MYR157.092MYR3,927.30

*price indicative

RS Stock No.:
920-0877
Mfr. Part No.:
IXFK26N120P
Manufacturer:
IXYS
Find similar products by selecting one or more attributes.
Select all

Brand

IXYS

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

26A

Maximum Drain Source Voltage Vds

1200V

Package Type

TO-264

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

460mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

960W

Maximum Gate Source Voltage Vgs

30 V

Forward Voltage Vf

1.5V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

225nC

Maximum Operating Temperature

150°C

Height

26.16mm

Standards/Approvals

No

Width

5.13 mm

Length

19.96mm

Automotive Standard

No

N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series


N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS

MOSFET Transistors, IXYS


A wide range of advanced discrete Power MOSFET devices from IXYS

Related links