- RS Stock No.:
- 194-451
- Mfr. Part No.:
- IXFH26N60P
- Manufacturer:
- IXYS
Temporarily out of stock - back order for despatch 30/12/2024, delivery within 4 working days from despatch date
Added
Price Each
MYR44.28
Units | Per Unit |
1 - 7 | MYR44.28 |
8 - 14 | MYR44.17 |
15 + | MYR38.18 |
- RS Stock No.:
- 194-451
- Mfr. Part No.:
- IXFH26N60P
- Manufacturer:
- IXYS
Technical data sheets
Legislation and Compliance
Product Details
N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series
N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
Specifications
Attribute | Value |
---|---|
Channel Type | N |
Maximum Continuous Drain Current | 26 A |
Maximum Drain Source Voltage | 600 V |
Series | HiperFET, Polar |
Package Type | TO-247 |
Mounting Type | Through Hole |
Pin Count | 3 |
Maximum Drain Source Resistance | 270 mΩ |
Channel Mode | Enhancement |
Maximum Gate Threshold Voltage | 5V |
Maximum Power Dissipation | 460 W |
Transistor Configuration | Single |
Maximum Gate Source Voltage | -30 V, +30 V |
Number of Elements per Chip | 1 |
Typical Gate Charge @ Vgs | 72 nC @ 10 V |
Width | 5.3mm |
Maximum Operating Temperature | +150 °C |
Length | 16.26mm |
Transistor Material | Si |
Height | 21.46mm |
Minimum Operating Temperature | -55 °C |