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MOSFETs
N-Channel MOSFET, 26 A, 600 V, 3-Pin TO-247 IXYS IXFH26N60P
RS Stock No.:
194-451
Mfr. Part No.:
IXFH26N60P
Manufacturer:
IXYS
View all MOSFETs
Available for back order.
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Price Each
MYR44.28
Units
Per Unit
1 - 7
MYR44.28
8 - 14
MYR44.17
15 +
MYR38.18
Packaging Options:
Standard Pack
Production Pack
RS Stock No.:
194-451
Mfr. Part No.:
IXFH26N60P
Manufacturer:
IXYS
Technical data sheets
Legislation and Compliance
Product Details
Specifications
IXFH26N60P PolarHV Power MOSFET Data Sheet
ESD Control Selection Guide V1
RoHS Certificate of Compliance
Statement of conformity
N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series
N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
Attribute
Value
Channel Type
N
Maximum Continuous Drain Current
26 A
Maximum Drain Source Voltage
600 V
Series
HiperFET, Polar
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
270 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Maximum Power Dissipation
460 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Transistor Material
Si
Width
5.3mm
Length
16.26mm
Maximum Operating Temperature
+150 °C
Number of Elements per Chip
1
Typical Gate Charge @ Vgs
72 nC @ 10 V
Height
21.46mm
Minimum Operating Temperature
-55 °C