N-Channel MOSFET, 180 A, 40 V, 7-Pin D2PAK-7 Infineon IPB011N04NGATMA1

RS Stock No.:: 898-6918
Mfr. Part No.:: IPB011N04NGATMA1
Manufacturer:: Infineon

N-Channel MOSFET, 180 A, 40 V, 7-Pin D2PAK-7 Infineon IPB011N04NGATMA1

Subtotal (1 pack of 4 units)**

MYR66.94

2516 In Global stock for delivery in 4-6 working days, delivery time may vary for certain locations or FTZ*

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Units	Per Unit	Per Pack**
4 +	MYR16.735	MYR66.94

**price indicative

RS Stock No.:: 898-6918
Mfr. Part No.:: IPB011N04NGATMA1
Manufacturer:: Infineon

Infineon OptiMOS™3 Power MOSFETs, up to 40V

OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.

Fast switching MOSFET for SMPS
Optimized technology for DC/DC converters
Qualified according to JEDEC1) for target applications
N-channel, logic level
Excellent gate charge x R DS(on) product (FOM)
Very low on-resistance R DS(on)
Pb-free plating

Infineon OptiMOS™ 3 Series MOSFET, 180A Maximum Continuous Drain Current, 250W Maximum Power Dissipation - IPB011N04NGATMA1

This MOSFET is optimised for high-performance applications in the electrical and mechanical sectors. It features a sturdy design and efficient operation, making it suitable for automation systems. With a maximum continuous drain current of 180 A and a maximum drain-source voltage of 40V, it provides enhanced efficiency and reliability in circuit performance.

Features & Benefits

• High current handling improves system efficiency and performance
• Low Rds(on) reduces power loss during operation
• Surface mount design allows easy integration into PCBs
• Capable of dissipating up to 250W, serving a variety of applications
• Wide operating temperature range ensures functionality in different environments - N-channel configuration offers improved switching characteristics

Applications

• Utilised in motor control and drive systems
• Suitable for power management in industrial automation
• Employed in DC-DC converters and inverters
• Used for load switching in power distribution systems
• Applicable in renewable energy systems, such as solar inverters

What is the maximum continuous drain current for this device?

The device can handle up to 180A of continuous drain current, making it appropriate for high-power applications.

Can it operate in high temperatures?

Yes, it has a maximum operating temperature of +175°C, allowing consistent performance under challenging conditions.

What are the gate threshold voltage specifications?

The maximum gate threshold voltage is 4V, while the minimum is 2V, providing flexibility in operational compatibility.

What type of mounting does this component support?

This product is designed for surface mounting, facilitating straightforward installation on various circuit boards.

How does this MOSFET contribute to power efficiency?

Its low Rds(on) value of 1.1 mΩ significantly reduces power loss, enhancing the efficiency of electronic systems overall.

For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	180 A
Maximum Drain Source Voltage	40 V
Package Type	D2PAK-7
Series	OptiMOS™ 3
Mounting Type	Surface Mount
Pin Count	7
Maximum Drain Source Resistance	1.1 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	4V
Minimum Gate Threshold Voltage	2V
Maximum Power Dissipation	250 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Transistor Material	Si
Typical Gate Charge @ Vgs	188 nC @ 10 V
Length	10.31mm
Number of Elements per Chip	1
Maximum Operating Temperature	+175 °C
Width	9.45mm
Forward Diode Voltage	1.2V
Height	4.57mm
Minimum Operating Temperature	-55 °C